X-band rapid-scan EPR of samples with long electron spin relaxation times: A comparison of continuous wave, pulse and rapid-scan EPR

Deborah G. Mitchell, Mark Tseitlin, Richard W. Quine, Virginia Meyer, Mark E. Newton, Alexander Schnegg, Benjamin M George, Sandra S. Eaton, Gareth R. Eaton

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Abstract

X-band room temperature spectra obtained by rapid-scan, continuous wave, field-swept echo-detected and Fourier transform electron paramagnetic resonance (FTEPR) were compared for three samples with long electron spin relaxation times: amorphous hydrogenated silicon (T1 = 11 s, T2 = 3.3 s), 0.2% N@C60 solid (T1 = 120-160 s, T2 = 2.8 s) and neutral single substitutional nitrogen centres (NS) in diamonds (T1 = 2300 s, T2 = 230 s). For each technique, experimental parameters were selected to give less than 2% broadening of the lineshape. For the same data acquisition times, the signal-to-noise for the rapid-scan spectra was one-to-two orders of magnitude better than for continuous wave or field-swept echo-detected spectra. For amorphous hydrogenated silicon, T2 (∼ 10 ns) is too short to perform FTEPR. For 0.2% N@C 60, the signal-to-noise ratio for rapid scan is about five times better than for FTEPR. For NS the signal-to-noise ratio is similar for rapid scan and FTEPR.

Original languageEnglish
Pages (from-to)2664-2673
Number of pages10
JournalMolecular Physics
Volume111
Issue number18-19
DOIs
Publication statusPublished - 1 Oct 2013
Externally publishedYes

Keywords

  • hydrogenated silicon
  • N@C
  • rapid-scan EPR
  • single substitutional N in diamond

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