Hydroxyapatite-like thin films on silicon substrate were deposited using atomic layer deposition and were subjected to irradiation with Ar ions accelerated through 0.6-1.2 kV as well as 2 MeV 16O+ ions. After low energy Ar irradiation a significant reduction in contact angle was observed. However, the Ca/P atomic ratio remained unchanged. No reduction in contact angle was seen for high energy 16O+ irradiation. Atomic force microscopy showed the enhancement of floral-like pattern after low energy Ar bombardment while high energy oxygen irradiation lead to raised islands on as-deposited films.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 1 May 2008|