Abstract
A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.
| Original language | English |
|---|---|
| Article number | 14482 |
| Number of pages | 10 |
| Journal | Nature Communications |
| Volume | 8 |
| DOIs | |
| Publication status | Published - 17 Feb 2017 |
Cite this
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Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals. / Carey, Benjamin J.; Ou, Jian Zhen; Clark, Rhiannon M.; Berean, Kyle J.; Zavabeti, Ali; Chesman, Anthony S. R.; Russo, Salvy P.; Lau, Desmond W. M.; Xu, Zai Quan; Bao, Qiaoliang; Kavehei, Omid; Gibson, Brant C.; Dickey, Michael D.; Kaner, Richard B.; Daeneke, Torben; Kalantar-Zadeh, Kourosh.
In: Nature Communications, Vol. 8, 14482, 17.02.2017.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals
AU - Carey, Benjamin J.
AU - Ou, Jian Zhen
AU - Clark, Rhiannon M.
AU - Berean, Kyle J.
AU - Zavabeti, Ali
AU - Chesman, Anthony S. R.
AU - Russo, Salvy P.
AU - Lau, Desmond W. M.
AU - Xu, Zai Quan
AU - Bao, Qiaoliang
AU - Kavehei, Omid
AU - Gibson, Brant C.
AU - Dickey, Michael D.
AU - Kaner, Richard B.
AU - Daeneke, Torben
AU - Kalantar-Zadeh, Kourosh
PY - 2017/2/17
Y1 - 2017/2/17
N2 - A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.
AB - A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.
UR - http://www.scopus.com/inward/record.url?scp=85013171002&partnerID=8YFLogxK
U2 - 10.1038/ncomms14482
DO - 10.1038/ncomms14482
M3 - Article
VL - 8
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 14482
ER -