Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloys

G. N. Pain, N Bharatula, G. I. Christiansz, Martyn H Kibel, Mark S Kwietniak, C. Sandford, Tadeus Warminski, R. S. Dickson, R. S. Rowe, K McGregor, G. B. Deacon, B. O. West, S.R. Glanvill, D. G. Hay, Christopher Rossouw, Andrew W Stevenson

Research output: Contribution to journalArticleResearchpeer-review

20 Citations (Scopus)


The new organometallic feedstock MeMn(CO)5 has been used for the MOCVD growth of Cd1-xMnxTe (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg1-x-yCdxMnyTe was grown by in-situ annealing og HgTe overlayers on Cd1-xMnxTe epilayers. Adherent films of Hg1-xMnxTe on glass were grown by MOCVD. The electrical properties show semi-metal behaviour, and XRD and other properties indicate a zinc-blende structure.

Original languageEnglish
Pages (from-to)208-210
Number of pages3
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1 Apr 1990

Cite this