Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloys

G. N. Pain; N Bharatula; G. I. Christiansz; Martyn H Kibel; Mark S Kwietniak; C. Sandford; Tadeus Warminski; R. S. Dickson; R. S. Rowe; K McGregor; G. B. Deacon; B. O. West; S.R. Glanvill; D. G. Hay; Christopher Rossouw; Andrew W Stevenson

doi:10.1016/0022-0248(90)90967-P

Use of MeMn(CO)₅ in the low temperature MOCVD growth of Mn containing alloys

G. N. Pain, N Bharatula, G. I. Christiansz, Martyn H Kibel, Mark S Kwietniak, C. Sandford, Tadeus Warminski, R. S. Dickson, R. S. Rowe, K McGregor, G. B. Deacon, B. O. West, S.R. Glanvill, D. G. Hay, Christopher Rossouw, Andrew W Stevenson

School of Chemistry

Research output: Contribution to journal › Article › Research › peer-review

21 Citations (Scopus)

Abstract

The new organometallic feedstock MeMn(CO)₅ has been used for the MOCVD growth of Cd_1-xMn_xTe (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg_1-x-yCd_xMn_yTe was grown by in-situ annealing og HgTe overlayers on Cd_1-xMn_xTe epilayers. Adherent films of Hg_1-xMn_xTe on glass were grown by MOCVD. The electrical properties show semi-metal behaviour, and XRD and other properties indicate a zinc-blende structure.

Original language	English
Pages (from-to)	208-210
Number of pages	3
Journal	Journal of Crystal Growth
Volume	101
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(90)90967-P
Publication status	Published - 1 Apr 1990

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Pain, G. N., Bharatula, N., Christiansz, G. I., Kibel, M. H., Kwietniak, M. S., Sandford, C., Warminski, T., Dickson, R. S., Rowe, R. S., McGregor, K., Deacon, G. B., West, B. O., Glanvill, S. R., Hay, D. G., Rossouw, C., & Stevenson, A. W. (1990). Use of MeMn(CO)₅ in the low temperature MOCVD growth of Mn containing alloys. Journal of Crystal Growth, 101(1-4), 208-210. https://doi.org/10.1016/0022-0248(90)90967-P

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title = "Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloys",

abstract = "The new organometallic feedstock MeMn(CO)5 has been used for the MOCVD growth of Cd1-xMnxTe (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg1-x-yCdxMnyTe was grown by in-situ annealing og HgTe overlayers on Cd1-xMnxTe epilayers. Adherent films of Hg1-xMnxTe on glass were grown by MOCVD. The electrical properties show semi-metal behaviour, and XRD and other properties indicate a zinc-blende structure.",

author = "Pain, {G. N.} and N Bharatula and Christiansz, {G. I.} and Kibel, {Martyn H} and Kwietniak, {Mark S} and C. Sandford and Tadeus Warminski and Dickson, {R. S.} and Rowe, {R. S.} and K McGregor and Deacon, {G. B.} and West, {B. O.} and S.R. Glanvill and Hay, {D. G.} and Christopher Rossouw and Stevenson, {Andrew W}",

year = "1990",

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doi = "10.1016/0022-0248(90)90967-P",

language = "English",

volume = "101",

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Pain, GN, Bharatula, N, Christiansz, GI, Kibel, MH, Kwietniak, MS, Sandford, C, Warminski, T, Dickson, RS, Rowe, RS, McGregor, K, Deacon, GB, West, BO, Glanvill, SR, Hay, DG, Rossouw, C & Stevenson, AW 1990, 'Use of MeMn(CO)₅ in the low temperature MOCVD growth of Mn containing alloys', Journal of Crystal Growth, vol. 101, no. 1-4, pp. 208-210. https://doi.org/10.1016/0022-0248(90)90967-P

TY - JOUR

T1 - Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloys

AU - Pain, G. N.

AU - Bharatula, N

AU - Christiansz, G. I.

AU - Kibel, Martyn H

AU - Kwietniak, Mark S

AU - Sandford, C.

AU - Warminski, Tadeus

AU - Dickson, R. S.

AU - Rowe, R. S.

AU - McGregor, K

AU - Deacon, G. B.

AU - West, B. O.

AU - Glanvill, S.R.

AU - Hay, D. G.

AU - Rossouw, Christopher

AU - Stevenson, Andrew W

PY - 1990/4/1

Y1 - 1990/4/1

N2 - The new organometallic feedstock MeMn(CO)5 has been used for the MOCVD growth of Cd1-xMnxTe (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg1-x-yCdxMnyTe was grown by in-situ annealing og HgTe overlayers on Cd1-xMnxTe epilayers. Adherent films of Hg1-xMnxTe on glass were grown by MOCVD. The electrical properties show semi-metal behaviour, and XRD and other properties indicate a zinc-blende structure.

AB - The new organometallic feedstock MeMn(CO)5 has been used for the MOCVD growth of Cd1-xMnxTe (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg1-x-yCdxMnyTe was grown by in-situ annealing og HgTe overlayers on Cd1-xMnxTe epilayers. Adherent films of Hg1-xMnxTe on glass were grown by MOCVD. The electrical properties show semi-metal behaviour, and XRD and other properties indicate a zinc-blende structure.

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U2 - 10.1016/0022-0248(90)90967-P

DO - 10.1016/0022-0248(90)90967-P

M3 - Article

AN - SCOPUS:0025412839

SN - 0022-0248

VL - 101

SP - 208

EP - 210

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloys

Abstract

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Use of MeMn(CO)₅ in the low temperature MOCVD growth of Mn containing alloys