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Ultrathin Ga2O3 Glass: A Large-Scale Passivation and Protection Material for Monolayer WS2

  • Matthias Wurdack
  • , Tinghe Yun
  • , Eliezer Estrecho
  • , Nitu Syed
  • , Semonti Bhattacharyya
  • , Maciej Pieczarka
  • , Ali Zavabeti
  • , Shao Yu Chen
  • , Benedikt Haas
  • , Johannes Müller
  • , Mark N. Lockrey
  • , Qiaoliang Bao
  • , Christian Schneider
  • , Yuerui Lu
  • , Michael S. Fuhrer
  • , Andrew G. Truscott
  • , Torben Daeneke
  • , Elena A. Ostrovskaya

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, it is shown that the novel, ultrathin Ga2O3 glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga2O3 capping of monolayer WS2 outperforms commercial-grade hBN in both scalability and optical performance at room temperature. These properties make Ga2O3 highly suitable for large-scale passivation and protection of monolayer TMDCs in functional heterostructures.

Original languageEnglish
Article number2005732
Number of pages6
JournalAdvanced Materials
Volume33
Issue number3
DOIs
Publication statusPublished - 21 Jan 2021

Keywords

  • 2D materials
  • atomically thin semiconductors
  • device integration
  • exciton enhancement
  • passivation
  • transition metal dichalcogenides

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