Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect

Keiko Yamada; Seigo Souma; Kunihiko Yamauchi; Natsumi Shimamura; Katsuaki Sugawara; Chi Xuan Trang; Tamio Oguchi; Keiji Ueno; Takashi Takahashi; Takafumi Sato

doi:10.1021/acs.nanolett.8b01003

Ultrathin Bismuth Film on 1T-TaS₂: Structural Transition and Charge-Density-Wave Proximity Effect

Keiko Yamada, Seigo Souma, Kunihiko Yamauchi, Natsumi Shimamura, Katsuaki Sugawara, Chi Xuan Trang, Tamio Oguchi, Keiji Ueno, Takashi Takahashi, Takafumi Sato

Research output: Contribution to journal › Article › Research › peer-review

28 Citations (Scopus)

Abstract

We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS₂ and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS₂ undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level (E_F), the energy band of the same film on 1T-TaS₂ exhibits holelike dispersion with a finite energy gap at E_F. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.

Original language	English
Pages (from-to)	3235-3240
Number of pages	6
Journal	Nano Letters
Volume	18
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.8b01003
Publication status	Published - 9 May 2018
Externally published	Yes

Keywords

band structure
Charge density wave
photoemission spectroscopy
Rashba metal
ultrathin film

Access to Document

10.1021/acs.nanolett.8b01003

Cite this

@article{81402ec78c954c87809cfee895603448,

title = "Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect",

abstract = "We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS2 and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS2 undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level (EF), the energy band of the same film on 1T-TaS2 exhibits holelike dispersion with a finite energy gap at EF. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.",

keywords = "band structure, Charge density wave, photoemission spectroscopy, Rashba metal, ultrathin film",

author = "Keiko Yamada and Seigo Souma and Kunihiko Yamauchi and Natsumi Shimamura and Katsuaki Sugawara and Trang, {Chi Xuan} and Tamio Oguchi and Keiji Ueno and Takashi Takahashi and Takafumi Sato",

note = "Funding Information: This work was supported by Grant-in-Aid for Scientific Research on Innovative Areas “Topological Materials Science” (JSPS KAKENHI Grant Number JP15H05853), “Science of Atomic Layers” (JSPS KAKENHI Grant Numbers JP25107003, JP25107004), and Grant-in-Aid for Scientific Research (JSPS KAKENHI Grant Numbers JP17H01139, JP15H02105, JP26287071, and JP25287079). Publisher Copyright: {\textcopyright} 2018 American Chemical Society. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2018",

month = may,

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doi = "10.1021/acs.nanolett.8b01003",

language = "English",

volume = "18",

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T1 - Ultrathin Bismuth Film on 1T-TaS2

T2 - Structural Transition and Charge-Density-Wave Proximity Effect

AU - Yamada, Keiko

AU - Souma, Seigo

AU - Yamauchi, Kunihiko

AU - Shimamura, Natsumi

AU - Sugawara, Katsuaki

AU - Trang, Chi Xuan

AU - Oguchi, Tamio

AU - Ueno, Keiji

AU - Takahashi, Takashi

AU - Sato, Takafumi

N1 - Funding Information: This work was supported by Grant-in-Aid for Scientific Research on Innovative Areas “Topological Materials Science” (JSPS KAKENHI Grant Number JP15H05853), “Science of Atomic Layers” (JSPS KAKENHI Grant Numbers JP25107003, JP25107004), and Grant-in-Aid for Scientific Research (JSPS KAKENHI Grant Numbers JP17H01139, JP15H02105, JP26287071, and JP25287079). Publisher Copyright: © 2018 American Chemical Society. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2018/5/9

Y1 - 2018/5/9

N2 - We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS2 and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS2 undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level (EF), the energy band of the same film on 1T-TaS2 exhibits holelike dispersion with a finite energy gap at EF. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.

AB - We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS2 and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS2 undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level (EF), the energy band of the same film on 1T-TaS2 exhibits holelike dispersion with a finite energy gap at EF. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.

KW - band structure

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KW - photoemission spectroscopy

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