Abstract
The evaluation of weak bonds within an IC package has been investigated in this paper. Samples of IC packaging have been fabricated containing structures of the die (silicon)/die-attach (silver-based adhesive)/lead frame (copper), which are typically found in IC packaging, and are degraded, to various extents, through thermal cycling to obtain varied levels of bond degradation. Interface reflection ultrasonic waveforms have been measured using a spherically focused transducer and C-scan imaging is carried out, with the results explained using an interface spring model. The ultrasonic waveforms and images obtained clearly match the thermal-cycling history, the failure shear stress measurements and the results of optical microscopy reasonably well.
Original language | English |
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Article number | 015 |
Pages (from-to) | 2637-2642 |
Number of pages | 6 |
Journal | Measurement Science and Technology |
Volume | 17 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1 Oct 2006 |
Externally published | Yes |
Keywords
- C-scan imaging
- Failure shear strength
- IC packaging
- Weak bond