Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 22501-22505 |
| Number of pages | 5 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 8 |
| Issue number | 34 |
| DOIs | |
| Publication status | Published - 4 Sep 2016 |
Keywords
- Strain gauge
- rGO
- Direct GO patterning
- Shear alignment
- High sensitivity
- Flexible substrate
Cite this
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Ultrasensitive strain sensor produced by direct patterning of liquid crystals of graphene oxide on a flexible substrate. / Coskun, M. Bulut; Akbari, Abozar; Lai, Daniel T. H.; Neild, Adrian; Majumder, Mainak; Alan, Tuncay.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 34, 04.09.2016, p. 22501-22505.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - Ultrasensitive strain sensor produced by direct patterning of liquid crystals of graphene oxide on a flexible substrate
AU - Coskun, M. Bulut
AU - Akbari, Abozar
AU - Lai, Daniel T. H.
AU - Neild, Adrian
AU - Majumder, Mainak
AU - Alan, Tuncay
PY - 2016/9/4
Y1 - 2016/9/4
N2 - Ultrasensitive flexible strain sensors were developed through the combination of shear alignment of a high concentration graphene oxide (GO) dispersion with fast and precise patterning of multiple rectangular features on a flexible substrate. Resistive changes in the reduced GO films were investigated under various uniaxial strain cycles ranging from 0.025 to 2%, controlled with a motorized anopositioning stage. The devices uniquely combine a very small detection limit (0.025%) and a high gauge factor with a rapid fabrication process conducive to batch production.
AB - Ultrasensitive flexible strain sensors were developed through the combination of shear alignment of a high concentration graphene oxide (GO) dispersion with fast and precise patterning of multiple rectangular features on a flexible substrate. Resistive changes in the reduced GO films were investigated under various uniaxial strain cycles ranging from 0.025 to 2%, controlled with a motorized anopositioning stage. The devices uniquely combine a very small detection limit (0.025%) and a high gauge factor with a rapid fabrication process conducive to batch production.
KW - Strain gauge
KW - rGO
KW - Direct GO patterning
KW - Shear alignment
KW - High sensitivity
KW - Flexible substrate
UR - http://www.scopus.com/inward/record.url?scp=84986005696&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b06290
DO - 10.1021/acsami.6b06290
M3 - Article
VL - 8
SP - 22501
EP - 22505
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
SN - 1944-8244
IS - 34
ER -