The two-dimensional temperature distribution in a DH GaAs/GaAlAs laser diode under continuous operation is analysed. The dynamic thermal diffusion equation is solved using the transmission-line modelling (TLM) method. The heating mechanisms included in the model are nonradiative recombination in the active region, partial reabsorption of generated radiation in the active region, absorption of stimulated emission in the cladding regions, absorption of spontaneous radiation transferred to the capping and substrate layers, Joule heating of the substrate and scattering loss at the heterojunction interfaces.
|Number of pages||8|
|Journal||IEE Proceedings. A, Science, Measurement and Technology|
|Publication status||Published - 1 Jan 1994|