Two-dimensional shape memory graphene oxide

Zhenyue Chang, Junkai Deng, Ganaka G. Chandrakumara, Wenyi Yan, Jefferson Zhe Liu

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Driven by the increasing demand for micro-/nano-technologies, stimuli-responsive shape memory materials at nanoscale have recently attracted great research interests. However, by reducing the size of conventional shape memory materials down to approximately nanometre range, the shape memory effect diminishes. Here, using density functional theory calculations, we report the discovery of a shape memory effect in a two-dimensional atomically thin graphene oxide crystal with ordered epoxy groups, namely C8O. A maximum recoverable strain of 14.5% is achieved as a result of reversible phase transition between two intrinsically stable phases. Our calculations conclude co-existence of the two stable phases in a coherent crystal lattice, giving rise to the possibility of constructing multiple temporary shapes in a single material, thus, enabling highly desirable programmability. With an atomic thickness, excellent shape memory mechanical properties and electric field stimulus, the discovery of a two-dimensional shape memory graphene oxide opens a path for the development of exceptional micro-/nano-electromechanical devices.
Original languageEnglish
Article number11972
Number of pages9
JournalNature Communications
Volume7
DOIs
Publication statusPublished - 21 Jun 2016

Cite this

Chang, Zhenyue ; Deng, Junkai ; Chandrakumara, Ganaka G. ; Yan, Wenyi ; Liu, Jefferson Zhe. / Two-dimensional shape memory graphene oxide. In: Nature Communications. 2016 ; Vol. 7.
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Two-dimensional shape memory graphene oxide. / Chang, Zhenyue; Deng, Junkai; Chandrakumara, Ganaka G.; Yan, Wenyi; Liu, Jefferson Zhe.

In: Nature Communications, Vol. 7, 11972, 21.06.2016.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Two-dimensional shape memory graphene oxide

AU - Chang, Zhenyue

AU - Deng, Junkai

AU - Chandrakumara, Ganaka G.

AU - Yan, Wenyi

AU - Liu, Jefferson Zhe

PY - 2016/6/21

Y1 - 2016/6/21

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AB - Driven by the increasing demand for micro-/nano-technologies, stimuli-responsive shape memory materials at nanoscale have recently attracted great research interests. However, by reducing the size of conventional shape memory materials down to approximately nanometre range, the shape memory effect diminishes. Here, using density functional theory calculations, we report the discovery of a shape memory effect in a two-dimensional atomically thin graphene oxide crystal with ordered epoxy groups, namely C8O. A maximum recoverable strain of 14.5% is achieved as a result of reversible phase transition between two intrinsically stable phases. Our calculations conclude co-existence of the two stable phases in a coherent crystal lattice, giving rise to the possibility of constructing multiple temporary shapes in a single material, thus, enabling highly desirable programmability. With an atomic thickness, excellent shape memory mechanical properties and electric field stimulus, the discovery of a two-dimensional shape memory graphene oxide opens a path for the development of exceptional micro-/nano-electromechanical devices.

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