Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers

Mike Tebyetekerwa; Jian Zhang; Sandra Elizabeth Saji; Ary Anggara Wibowo; Sharidya Rahman; Thien N. Truong; Yuerui Lu; Zongyou Yin; Daniel Macdonald; Hieu T. Nguyen

doi:10.1016/j.xcrp.2021.100509

Twist-driven wide freedom of indirect interlayer exciton emission in MoS₂/WS₂ heterobilayers

Mike Tebyetekerwa, Jian Zhang, Sandra Elizabeth Saji, Ary Anggara Wibowo, Sharidya Rahman, Thien N. Truong, Yuerui Lu, Zongyou Yin, Daniel Macdonald, Hieu T. Nguyen

Research output: Contribution to journal › Article › Research › peer-review

32 Citations (Scopus)

Abstract

Theoretical and first-principal studies involving twisted two-dimensional (2D) heterobilayer transition metal dichalcogenides (TMDs) predict interlayer exciton (ILE) emission energy amplitudes (the energy difference between the lowest and the highest ILE emission energies) in the range of 100–260 meV. This can be translated into an interfacial exciton periodic potential modulation depth of 100–260 meV. However, experimental studies on twisted TMD heterobilayers have reported only a narrow depth of ILE emission of up to ∼70 meV. Here, we report a wide degree of freedom twist-angle-driven indirect ILE emission in chemical vapor deposition (CVD)-grown MoS₂/WS₂ vertical heterobilayers (up to ∼10%, amplitude of 120 ± 30 meV). This is attributed to the close interlayer spacing between MoS₂ and WS₂ courtesy of their similar hexagonal crystal symmetry with an almost similar size, coupled with interlayer spacing tuneability at various twist angles. The wide degree of freedom of ILE emission opens exciting avenues for exploring intriguing phenomena in tuneable twistronics.

Original language	English
Article number	100509
Number of pages	11
Journal	Cell Reports Physical Science
Volume	2
Issue number	8
DOIs	https://doi.org/10.1016/j.xcrp.2021.100509
Publication status	Published - 18 Aug 2021
Externally published	Yes

Keywords

2D materials
interlayer exciton
photoluminescence spectroscopy
transition metal dichalcogenides
twist-angle-dependent emission
twisted optoelectronics
van der Waals heterostructures

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10.1016/j.xcrp.2021.100509

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@article{cf58824c4b464a009b1ba2b02a802554,

title = "Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers",

abstract = "Theoretical and first-principal studies involving twisted two-dimensional (2D) heterobilayer transition metal dichalcogenides (TMDs) predict interlayer exciton (ILE) emission energy amplitudes (the energy difference between the lowest and the highest ILE emission energies) in the range of 100–260 meV. This can be translated into an interfacial exciton periodic potential modulation depth of 100–260 meV. However, experimental studies on twisted TMD heterobilayers have reported only a narrow depth of ILE emission of up to ∼70 meV. Here, we report a wide degree of freedom twist-angle-driven indirect ILE emission in chemical vapor deposition (CVD)-grown MoS2/WS2 vertical heterobilayers (up to ∼10%, amplitude of 120 ± 30 meV). This is attributed to the close interlayer spacing between MoS2 and WS2 courtesy of their similar hexagonal crystal symmetry with an almost similar size, coupled with interlayer spacing tuneability at various twist angles. The wide degree of freedom of ILE emission opens exciting avenues for exploring intriguing phenomena in tuneable twistronics.",

keywords = "2D materials, interlayer exciton, photoluminescence spectroscopy, transition metal dichalcogenides, twist-angle-dependent emission, twisted optoelectronics, van der Waals heterostructures",

author = "Mike Tebyetekerwa and Jian Zhang and Saji, {Sandra Elizabeth} and Wibowo, {Ary Anggara} and Sharidya Rahman and Truong, {Thien N.} and Yuerui Lu and Zongyou Yin and Daniel Macdonald and Nguyen, {Hieu T.}",

note = "Funding Information: This work was funded by the Australian Renewable Energy Agency (ARENA, RND017 ). The support from the Australian Research Council ( LE190100014 ) and the ANU Futures Scheme ( Q4601024 ) is also acknowledged. M.T. is grateful for the scholarship support from the Australian Government Research Training Program (RTP). H.T.N. acknowledges fellowship support from the Australian Centre for Advanced Photovoltaics (ACAP). Publisher Copyright: {\textcopyright} 2021 The Author(s)",

year = "2021",

month = aug,

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doi = "10.1016/j.xcrp.2021.100509",

language = "English",

volume = "2",

journal = "Cell Reports Physical Science",

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T1 - Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers

AU - Tebyetekerwa, Mike

AU - Zhang, Jian

AU - Saji, Sandra Elizabeth

AU - Wibowo, Ary Anggara

AU - Rahman, Sharidya

AU - Truong, Thien N.

AU - Lu, Yuerui

AU - Yin, Zongyou

AU - Macdonald, Daniel

AU - Nguyen, Hieu T.

N1 - Funding Information: This work was funded by the Australian Renewable Energy Agency (ARENA, RND017 ). The support from the Australian Research Council ( LE190100014 ) and the ANU Futures Scheme ( Q4601024 ) is also acknowledged. M.T. is grateful for the scholarship support from the Australian Government Research Training Program (RTP). H.T.N. acknowledges fellowship support from the Australian Centre for Advanced Photovoltaics (ACAP). Publisher Copyright: © 2021 The Author(s)

PY - 2021/8/18

Y1 - 2021/8/18

N2 - Theoretical and first-principal studies involving twisted two-dimensional (2D) heterobilayer transition metal dichalcogenides (TMDs) predict interlayer exciton (ILE) emission energy amplitudes (the energy difference between the lowest and the highest ILE emission energies) in the range of 100–260 meV. This can be translated into an interfacial exciton periodic potential modulation depth of 100–260 meV. However, experimental studies on twisted TMD heterobilayers have reported only a narrow depth of ILE emission of up to ∼70 meV. Here, we report a wide degree of freedom twist-angle-driven indirect ILE emission in chemical vapor deposition (CVD)-grown MoS2/WS2 vertical heterobilayers (up to ∼10%, amplitude of 120 ± 30 meV). This is attributed to the close interlayer spacing between MoS2 and WS2 courtesy of their similar hexagonal crystal symmetry with an almost similar size, coupled with interlayer spacing tuneability at various twist angles. The wide degree of freedom of ILE emission opens exciting avenues for exploring intriguing phenomena in tuneable twistronics.

AB - Theoretical and first-principal studies involving twisted two-dimensional (2D) heterobilayer transition metal dichalcogenides (TMDs) predict interlayer exciton (ILE) emission energy amplitudes (the energy difference between the lowest and the highest ILE emission energies) in the range of 100–260 meV. This can be translated into an interfacial exciton periodic potential modulation depth of 100–260 meV. However, experimental studies on twisted TMD heterobilayers have reported only a narrow depth of ILE emission of up to ∼70 meV. Here, we report a wide degree of freedom twist-angle-driven indirect ILE emission in chemical vapor deposition (CVD)-grown MoS2/WS2 vertical heterobilayers (up to ∼10%, amplitude of 120 ± 30 meV). This is attributed to the close interlayer spacing between MoS2 and WS2 courtesy of their similar hexagonal crystal symmetry with an almost similar size, coupled with interlayer spacing tuneability at various twist angles. The wide degree of freedom of ILE emission opens exciting avenues for exploring intriguing phenomena in tuneable twistronics.

KW - 2D materials

KW - interlayer exciton

KW - photoluminescence spectroscopy

KW - transition metal dichalcogenides

KW - twist-angle-dependent emission

KW - twisted optoelectronics

KW - van der Waals heterostructures

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U2 - 10.1016/j.xcrp.2021.100509

DO - 10.1016/j.xcrp.2021.100509

M3 - Article

AN - SCOPUS:85119567752

SN - 2666-3864

VL - 2

JO - Cell Reports Physical Science

JF - Cell Reports Physical Science

IS - 8

M1 - 100509

ER -

Twist-driven wide freedom of indirect interlayer exciton emission in MoS₂/WS₂ heterobilayers

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Multi-angle in-operando mapping of nanoscale electro/photo-redox reactions

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Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers

Abstract

Keywords

Access to Document

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Multi-angle in-operando mapping of nanoscale electro/photo-redox reactions

Cite this

Twist-driven wide freedom of indirect interlayer exciton emission in MoS₂/WS₂ heterobilayers