Twin intersections in silicon on sapphire

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Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.

Original languageEnglish
Pages (from-to)1037-1050
Number of pages14
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number5
Publication statusPublished - May 1991
Externally publishedYes

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