Twin intersections in silicon on sapphire

J. L. Batstone

doi:10.1080/13642819108207583

Twin intersections in silicon on sapphire

J. L. Batstone

Research output: Contribution to journal › Article › Research › peer-review

12 Citations (Scopus)

Abstract

Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.

Original language	English
Pages (from-to)	1037-1050
Number of pages	14
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	63
Issue number	5
DOIs	https://doi.org/10.1080/13642819108207583
Publication status	Published - May 1991
Externally published	Yes

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AB - Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.

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ER -

Twin intersections in silicon on sapphire

Abstract

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