Twin intersections in silicon on sapphire

J. L. Batstone

doi:10.1080/13642819108207583

Twin intersections in silicon on sapphire

J. L. Batstone

Research output: Contribution to journal › Article › Research › peer-review

12 Citations (Scopus)

Abstract

Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.

Original language	English
Pages (from-to)	1037-1050
Number of pages	14
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	63
Issue number	5
DOIs	https://doi.org/10.1080/13642819108207583
Publication status	Published - May 1991
Externally published	Yes

Access to Document

10.1080/13642819108207583

Link to publication in Scopus

Cite this

@article{5c15b492f7564dd8b6d0065417cb4d79,

title = "Twin intersections in silicon on sapphire",

abstract = "Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.",

author = "Batstone, {J. L.}",

year = "1991",

month = may,

doi = "10.1080/13642819108207583",

language = "English",

volume = "63",

pages = "1037--1050",

journal = "Philosophical Magazine B: Physics of Condensed Matter, Statistical Mechanics, Electronic, Optical, and Magnetic Properties",

issn = "1364-2812",

publisher = "Taylor & Francis",

number = "5",

}

TY - JOUR

T1 - Twin intersections in silicon on sapphire

AU - Batstone, J. L.

PY - 1991/5

Y1 - 1991/5

N2 - Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.

AB - Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of 29 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0026156168&partnerID=8YFLogxK

U2 - 10.1080/13642819108207583

DO - 10.1080/13642819108207583

M3 - Article

AN - SCOPUS:0026156168

VL - 63

SP - 1037

EP - 1050

JO - Philosophical Magazine B: Physics of Condensed Matter, Statistical Mechanics, Electronic, Optical, and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter, Statistical Mechanics, Electronic, Optical, and Magnetic Properties

SN - 1364-2812

IS - 5

ER -