Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

Anton Tadich; Mark Thomas Edmonds; Lothar F Ley; Felix Fromm; Yaou Smets; Zoran Mazej; John Douglas Riley; Christopher Ian Pakes; Thomas K Seyller; Martina Wanke

doi:10.1063/1.4811248

Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

Anton Tadich, Mark Thomas Edmonds, Lothar F Ley, Felix Fromm, Yaou Smets, Zoran Mazej, John Douglas Riley, Christopher Ian Pakes, Thomas K Seyller, Martina Wanke

Research output: Contribution to journal › Article › Research › peer-review

27 Citations (Scopus)

Original language	English
Pages (from-to)	1 - 5
Number of pages	5
Journal	Applied Physics Letters
Volume	102
Issue number	24
DOIs	https://doi.org/10.1063/1.4811248
Publication status	Published - 2013
Externally published	Yes

Access to Document

10.1063/1.4811248

Cite this

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title = "Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48",

author = "Anton Tadich and Edmonds, {Mark Thomas} and Ley, {Lothar F} and Felix Fromm and Yaou Smets and Zoran Mazej and Riley, {John Douglas} and Pakes, {Christopher Ian} and Seyller, {Thomas K} and Martina Wanke",

year = "2013",

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volume = "102",

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T1 - Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48

AU - Tadich, Anton

AU - Edmonds, Mark Thomas

AU - Ley, Lothar F

AU - Fromm, Felix

AU - Smets, Yaou

AU - Mazej, Zoran

AU - Riley, John Douglas

AU - Pakes, Christopher Ian

AU - Seyller, Thomas K

AU - Wanke, Martina

PY - 2013

Y1 - 2013

U2 - 10.1063/1.4811248

DO - 10.1063/1.4811248

M3 - Article

SN - 0003-6951

VL - 102

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -