Liquid phase nonequilibrium segregation and trapping of Au in Si induced by Q-switched laser irradiation are reported. Depending on the incident laser energy density, irradiation results in either amorphization or recrystallization of a near surface layer. In the latter case, at interface velocities of 9 m/s, the segregation coefficient is 0.1±0.02 and Au is trapped in near-substitutional lattice sites at concentrations of 0.5 at. %. These results are compared with recent data on solid phase, ion beam induced segregation, where Au at the amorphous-crystal interface is trapped on nonunique lattice sites.