Transport through crossed nanotubes

M. S. Fuhrer, Andrew K.L. Lim, L. Shih, U. Varadarajan, A. Zettl, Paul L. McEuen

Research output: Contribution to journalConference articleResearchpeer-review

29 Citations (Scopus)


In order to study the electronic properties of single-walled carbon nanotube junctions we have fabricated several devices consisting of two crossed nanotubes with electrical leads attached to each end of each nanotube. We correlate the properties of the junctions with the properties of the individual nanotubes: metal-metal, metal-semiconductor, and semiconductor-semiconductor junctions are all formed. We find that metal-metal SWNT junctions exhibit surprisingly high conductances of 0.1-0.2 e2/h. Semiconductor-semiconductor junctions also show significant linear response conductance. Metal-semiconductor junctions behave as p-type Schottky diodes. All the junction types can reliably pass currents of hundreds of nanoamps.

Original languageEnglish
Pages (from-to)868-871
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Can
Duration: 1 Aug 19996 Aug 1999

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