Transient hot electron dynamics in single-layer TaS2

Federico Andreatta, Habib Rostami, Antonija Grubišić Čabo

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Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single-layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈100meV, accompanied by electronic temperatures exceeding 3000 K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semiempirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.
Original languageEnglish
Article number165421
Number of pages9
JournalPhysical Review B
Issue number16
Publication statusPublished - 15 Apr 2019
Externally publishedYes

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