Towards quantum dot-based photonic integrated circuits

L. Fu, P. Lever, S. Mokkapati, Q. Gao, H. H. Tan, C. Jagadish

Research output: Contribution to journalConference articleOther

Abstract

In this paper, techniques of quantum dot interdiffusion such as impurity free vacancy disordering and ion implantation induced disordering as well as the selective area epitaxy by metal-organic chemical vapour deposition have been used to tune the emission wavelength of self-orgainsed quantum dot structures. Under optimized experimental conditions, large differential band gap energies have been achieved by all approaches which is essential for quantum dot-based photonic integrated circuits.

Original languageEnglish
Article number05
Pages (from-to)41-48
Number of pages8
JournalProgress in Biomedical Optics and Imaging
Volume5729
DOIs
Publication statusPublished - 21 Jul 2005
Externally publishedYes
EventOptoelectronic Integrated Circuits VII - San Jose, CA, United States of America
Duration: 25 Jan 200527 Jan 2005

Keywords

  • Impurity free vacancy disordering
  • Interdiffusion
  • Ion implantation
  • Photonic integrated circuits
  • Quantum dot
  • Selective area epitaxy

Cite this

Fu, L. ; Lever, P. ; Mokkapati, S. ; Gao, Q. ; Tan, H. H. ; Jagadish, C. / Towards quantum dot-based photonic integrated circuits. In: Progress in Biomedical Optics and Imaging. 2005 ; Vol. 5729. pp. 41-48.
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Towards quantum dot-based photonic integrated circuits. / Fu, L.; Lever, P.; Mokkapati, S.; Gao, Q.; Tan, H. H.; Jagadish, C.

In: Progress in Biomedical Optics and Imaging, Vol. 5729, 05, 21.07.2005, p. 41-48.

Research output: Contribution to journalConference articleOther

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