Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs(001)

Zhenyu Zhou; Wen-Xin Tang; David Jesson; J Tersoff

doi:10.1063/1.3515925

Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs(001)

Zhenyu Zhou, Wen-Xin Tang, David Jesson, J Tersoff

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8 Citations (Scopus)

Abstract

The time evolution of the Ga droplet size distribution is measured by in situ surface electron microscopy during Langmuir evaporation of GaAs. With a minimum of complexity, we are able to reproduce and explain the major features of the droplet size distribution by a simple Monte Carlo model. Guided by the experiment, the model includes droplet formation in response to coalescence events. A? 2010 American Institute of Physics.

Original language	English
Pages (from-to)	1 - 3
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3515925
Publication status	Published - 2010

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10.1063/1.3515925

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abstract = "The time evolution of the Ga droplet size distribution is measured by in situ surface electron microscopy during Langmuir evaporation of GaAs. With a minimum of complexity, we are able to reproduce and explain the major features of the droplet size distribution by a simple Monte Carlo model. Guided by the experiment, the model includes droplet formation in response to coalescence events. A? 2010 American Institute of Physics.",

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AB - The time evolution of the Ga droplet size distribution is measured by in situ surface electron microscopy during Langmuir evaporation of GaAs. With a minimum of complexity, we are able to reproduce and explain the major features of the droplet size distribution by a simple Monte Carlo model. Guided by the experiment, the model includes droplet formation in response to coalescence events. A? 2010 American Institute of Physics.

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Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs(001)

Abstract

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