Three−dimensional lattice rotation in GaAs nanowire growth on hydrogen−silsesquioxane covered GaAs (001) using molecular beam epitaxy

Dat Q. Tran, Huyen T. Pham, Koichi Higashimine, Yoshifumi Oshima, Masashi Akabori

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Abstract

We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs 111B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs 111A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be 111-oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around 111 directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

Original languageEnglish
Pages (from-to)58-62
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume99
DOIs
Publication statusPublished - May 2018
Externally publishedYes

Keywords

  • GaAs nanowires
  • III-V semiconductors
  • Molecular beam epitaxial growth
  • Vapor liquid solid

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