Thin-film transistors with a graphene oxide nanocomposite channel

S. Mahaboob Jilani, Tanesh D. Gamot, P. Banerji

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO2/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed better field-effect performance because of the anchoring of ZnO nanostructures in the GO matrix, which causes a partial reduction in GO as is found from X-ray photoelectron spectroscopic data. The field-effect mobility of charge carriers at a drain voltage of 1 V was found to be 1.94 cm2/(V s). The transport of charge carriers in GO-ZnO was explained by a fluctuation-induced tunneling mechanism.

Original languageEnglish
Pages (from-to)16485-16489
Number of pages5
JournalLangmuir
Volume28
Issue number48
DOIs
Publication statusPublished - 4 Dec 2012
Externally publishedYes

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