Thin-film barristor: a gate-tunable vertical graphene-pentacene device

C Ojeda-Aristizabal, Wenzhong Bao, Michael Fuhrer

    Research output: Contribution to journalArticleResearchpeer-review

    35 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1 - 4
    Number of pages4
    JournalPhysical Review B
    Volume88
    Issue number3
    DOIs
    Publication statusPublished - 2013

    Cite this

    Ojeda-Aristizabal, C ; Bao, Wenzhong ; Fuhrer, Michael. / Thin-film barristor: a gate-tunable vertical graphene-pentacene device. In: Physical Review B. 2013 ; Vol. 88, No. 3. pp. 1 - 4.
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    year = "2013",
    doi = "10.1103/PhysRevB.88.035435",
    language = "English",
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    journal = "Physical Review B",
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    publisher = "American Physical Society",
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    Thin-film barristor: a gate-tunable vertical graphene-pentacene device. / Ojeda-Aristizabal, C; Bao, Wenzhong; Fuhrer, Michael.

    In: Physical Review B, Vol. 88, No. 3, 2013, p. 1 - 4.

    Research output: Contribution to journalArticleResearchpeer-review

    TY - JOUR

    T1 - Thin-film barristor: a gate-tunable vertical graphene-pentacene device

    AU - Ojeda-Aristizabal, C

    AU - Bao, Wenzhong

    AU - Fuhrer, Michael

    PY - 2013

    Y1 - 2013

    U2 - 10.1103/PhysRevB.88.035435

    DO - 10.1103/PhysRevB.88.035435

    M3 - Article

    VL - 88

    SP - 1

    EP - 4

    JO - Physical Review B

    JF - Physical Review B

    SN - 2469-9950

    IS - 3

    ER -