Theoretical study of growth mechanism of goethite in the presence of surfactants

Jeffrey Yue, Xuchuan Jiang, Aibing Yu

Research output: Chapter in Book/Report/Conference proceedingConference PaperResearchpeer-review

2 Citations (Scopus)


Goethite (alpha-FeOOH) nanorods could be prepared by a surfactant directed approach in aqueous solution at ambient conditions. In this approach, it is observed that the surfactants (e.g, cetyltrimethylammonium bromide (CTAB) and tetraethylamine chloride (TEAC)) play a key role in the growth of goethite nanorods under the reported conditions. The molecular dynamics (MD) method is used to understand the underlying principle governing particle formation and growth through the analysis of the interaction energies between the crystal surfaces and the surfactant molecules. The findings will be useful for understanding the growth mechanism of anisotropic particles and their surface coatings with heterogeneous materials for desired functional properties
Original languageEnglish
Title of host publicationMaterials Science Forum: 7th Pacific Rim International Conference on Advanced Materials and Processing (PRICM-7)
EditorsJian-Feng Nie, Allan Morton
Place of PublicationPfaffikon Switzerland
PublisherTrans Tech Publications
Pages1658 - 1661
Number of pages4
ISBN (Print)0255-5476
Publication statusPublished - 2010
Externally publishedYes
EventPacific Rim International Congress on Advanced Materials and Processing 2010 - Cairns Qld Australia, Cairns, Australia
Duration: 2 Aug 20106 Aug 2010
Conference number: 7th


ConferencePacific Rim International Congress on Advanced Materials and Processing 2010
Abbreviated titlePRICM-7

Cite this