TY - JOUR
T1 - The U5+ compound Ba9Ag10U4S24
T2 - Synthesis, structure, and electronic properties
AU - Mesbah, Adel
AU - Stojko, Wojciech
AU - Lebègue, Sébastien
AU - Malliakas, Christos D.
AU - Frazer, Laszlo
AU - Ibers, James A.
PY - 2015
Y1 - 2015
N2 - Black crystals of Ba9Ag10U4S24 have been made by direct combination of BaS, Ag, U, and S at 1273 K. This compound crystallizes in a new structure type in the space group C4v10-I4cm of the tetragonal system with four formula units in a cell with lattice constants a=13.9189(6) Å and c=23.7641(11) Å (V=4604(5) Å3). Multiphoton Luminescence Spectroscopy measurements are consistent with the noncentrosymmetric nature of the structure. In the structure each U atom is octahedrally coordinated by six S atoms, whereas three of the five crystallographically independent Ag atoms are tetrahedrally coordinated to four S atoms, another has a seesaw coordination to four S atoms, and the last has a triangular coordination to three S atoms. The overall structure consists of the three-dimensional stacking of the US6, AgS4, and AgS3 polyhedra to leave channels in which Ba atoms reside. Based on the values of the U-S interatomic distances, the compound Ba9Ag10U4S24 contains U5+ and charge balance is achieved with the formal oxidation states of 9 Ba2+, 10 Ag1+, 4 U5+ and 24 S2-. DFT calculations predict an antiferromagnetic ground state and a band gap of 2.1 eV. Resistivity measurements indicate that the compound is a semiconductor with a complex activation mechanism and activation energies ranging from 0.03(1) eV to 0.08(1) eV.
AB - Black crystals of Ba9Ag10U4S24 have been made by direct combination of BaS, Ag, U, and S at 1273 K. This compound crystallizes in a new structure type in the space group C4v10-I4cm of the tetragonal system with four formula units in a cell with lattice constants a=13.9189(6) Å and c=23.7641(11) Å (V=4604(5) Å3). Multiphoton Luminescence Spectroscopy measurements are consistent with the noncentrosymmetric nature of the structure. In the structure each U atom is octahedrally coordinated by six S atoms, whereas three of the five crystallographically independent Ag atoms are tetrahedrally coordinated to four S atoms, another has a seesaw coordination to four S atoms, and the last has a triangular coordination to three S atoms. The overall structure consists of the three-dimensional stacking of the US6, AgS4, and AgS3 polyhedra to leave channels in which Ba atoms reside. Based on the values of the U-S interatomic distances, the compound Ba9Ag10U4S24 contains U5+ and charge balance is achieved with the formal oxidation states of 9 Ba2+, 10 Ag1+, 4 U5+ and 24 S2-. DFT calculations predict an antiferromagnetic ground state and a band gap of 2.1 eV. Resistivity measurements indicate that the compound is a semiconductor with a complex activation mechanism and activation energies ranging from 0.03(1) eV to 0.08(1) eV.
UR - http://www.scopus.com/inward/record.url?scp=84918540429&partnerID=8YFLogxK
U2 - 10.1016/j.jssc.2014.10.014
DO - 10.1016/j.jssc.2014.10.014
M3 - Article
SN - 0022-4596
VL - 221
SP - 398
EP - 404
JO - Journal of Solid State Chemistry
JF - Journal of Solid State Chemistry
ER -