The structure of uncapped, buried and multiple stacked Ge/Si quantum dots

D. Zhi, M. Wei, D. W. Pashley, B. A. Joyce, M. Weyland, L. Laffont, T. J.V. Yates, A. C. Twitchett, R. E. Dunin-Borkowski, P. A. Midgley

Research output: Contribution to journalConference articleResearchpeer-review

1 Citation (Scopus)


In the present study, several different multiple-layered Ge/Si (001) QD structures with the final QD layer uncapped have been fabricated using gas source molecular beam epitaxy (GSMBE). The different characterisation techniques, including atomic force microscopy, diffraction-contrast transmission electron microscopy, high-resolution lattice imageing, analytical electron microscopy, and electron tomography, have been applied to characterise the morphology, structure and chemistry of both surface and buried QDs. The size, the shape and the number density of Ge islands show drastic changes when altering parameters such as growth temperature, Ge coverage and Si spacer layer thickness within Ge/Si multilayers. The atomic scale details obtained by HRTEM are combined with the results of field-emission gun scanning transmission electron microscopy (FEG-STEM), electron tomography to provide information on the structure of the QDs. All these structure information about QDs are discussed in relating to GSMBE growth conditions.

Original languageEnglish
Pages (from-to)39-42
Number of pages4
JournalInstitute of Physics Conference Series
Publication statusPublished - 19 Oct 2004
Externally publishedYes
EventElectron Microscopy and Analysis 2003 - Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference - Oxford, United Kingdom
Duration: 3 Sep 20035 Sep 2003

Cite this