The role of second-neighbor effects in photoemission: Are silicon surfaces and interfaces special?

K. Z. Zhang, K. E. Litz, M. M. Banaszak Holl, F. R. McFeely

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Abstract

A widely used assignment scheme for Si 2p core-level photoemission studies of silicon oxidation relies solely on the formal oxidation state of the silicon. The tacit assumption of this assignment methodology is that second-neighbor effects have no measurable effect on observed Si 2p binding energies. In this letter, new experiments are combined with literature precedents to make the case that the second-neighbor effects play an important role in determining binding energy shifts.

Original languageEnglish
Pages (from-to)46-48
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number1
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes

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