The microstructure of non-polar a-plane (1120) InGaN quantum wells

James T Griffiths, Fabrice Oehler, Fengzai Tang, Siyuan Zhang, Wai Yuen Fu, Tongtong Zhu, Scott D Findlay, Changlin Zheng, Joanne Etheridge, Tomas L Martin, Paul A J Bagot, Micheal P Moody, Danny Sutherland, Philip Dawson, Menno J Kappers, Colin J Humphreys, Rachel A Oliver

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.
Original languageEnglish
Article number175703
Number of pages6
JournalJournal of Applied Physics
Volume119
Issue number17
DOIs
Publication statusPublished - 2016

Cite this

Griffiths, J. T., Oehler, F., Tang, F., Zhang, S., Fu, W. Y., Zhu, T., ... Oliver, R. A. (2016). The microstructure of non-polar a-plane (1120) InGaN quantum wells. Journal of Applied Physics, 119(17), [175703]. https://doi.org/10.1063/1.4948299
Griffiths, James T ; Oehler, Fabrice ; Tang, Fengzai ; Zhang, Siyuan ; Fu, Wai Yuen ; Zhu, Tongtong ; Findlay, Scott D ; Zheng, Changlin ; Etheridge, Joanne ; Martin, Tomas L ; Bagot, Paul A J ; Moody, Micheal P ; Sutherland, Danny ; Dawson, Philip ; Kappers, Menno J ; Humphreys, Colin J ; Oliver, Rachel A. / The microstructure of non-polar a-plane (1120) InGaN quantum wells. In: Journal of Applied Physics. 2016 ; Vol. 119, No. 17.
@article{55fcd006785e42c29840fd96da9687a0,
title = "The microstructure of non-polar a-plane (1120) InGaN quantum wells",
abstract = "Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9{\%} to 20.6{\%} are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.",
author = "Griffiths, {James T} and Fabrice Oehler and Fengzai Tang and Siyuan Zhang and Fu, {Wai Yuen} and Tongtong Zhu and Findlay, {Scott D} and Changlin Zheng and Joanne Etheridge and Martin, {Tomas L} and Bagot, {Paul A J} and Moody, {Micheal P} and Danny Sutherland and Philip Dawson and Kappers, {Menno J} and Humphreys, {Colin J} and Oliver, {Rachel A}",
year = "2016",
doi = "10.1063/1.4948299",
language = "English",
volume = "119",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AIP Publishing",
number = "17",

}

Griffiths, JT, Oehler, F, Tang, F, Zhang, S, Fu, WY, Zhu, T, Findlay, SD, Zheng, C, Etheridge, J, Martin, TL, Bagot, PAJ, Moody, MP, Sutherland, D, Dawson, P, Kappers, MJ, Humphreys, CJ & Oliver, RA 2016, 'The microstructure of non-polar a-plane (1120) InGaN quantum wells', Journal of Applied Physics, vol. 119, no. 17, 175703. https://doi.org/10.1063/1.4948299

The microstructure of non-polar a-plane (1120) InGaN quantum wells. / Griffiths, James T; Oehler, Fabrice; Tang, Fengzai; Zhang, Siyuan; Fu, Wai Yuen; Zhu, Tongtong; Findlay, Scott D; Zheng, Changlin; Etheridge, Joanne; Martin, Tomas L; Bagot, Paul A J; Moody, Micheal P; Sutherland, Danny; Dawson, Philip; Kappers, Menno J; Humphreys, Colin J; Oliver, Rachel A.

In: Journal of Applied Physics, Vol. 119, No. 17, 175703, 2016.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - The microstructure of non-polar a-plane (1120) InGaN quantum wells

AU - Griffiths, James T

AU - Oehler, Fabrice

AU - Tang, Fengzai

AU - Zhang, Siyuan

AU - Fu, Wai Yuen

AU - Zhu, Tongtong

AU - Findlay, Scott D

AU - Zheng, Changlin

AU - Etheridge, Joanne

AU - Martin, Tomas L

AU - Bagot, Paul A J

AU - Moody, Micheal P

AU - Sutherland, Danny

AU - Dawson, Philip

AU - Kappers, Menno J

AU - Humphreys, Colin J

AU - Oliver, Rachel A

PY - 2016

Y1 - 2016

N2 - Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.

AB - Atom probe tomography and quantitative scanning transmission electron microscopy are used to assess the composition of non-polar a-plane (11-20) InGaN quantum wells for applications in optoelectronics. The average quantum well composition measured by atom probe tomography and quantitative scanning transmission electron microscopy quantitatively agrees with measurements by X-ray diffraction. Atom probe tomography is further applied to study the distribution of indium atoms in non-polar a-plane (11-20) InGaN quantum wells. An inhomogeneous indium distribution is observed by frequency distribution analysis of the atom probe tomography measurements. The optical properties of non-polar (11-20) InGaN quantum wells with indium compositions varying from 7.9% to 20.6% are studied. In contrast to non-polar m-plane (1-100) InGaN quantum wells, the non-polar a-plane (11-20) InGaN quantum wells emit at longer emission wavelengths at the equivalent indium composition. The non-polar a-plane (11-20) quantum wells also show broader spectral linewidths. The longer emission wavelengths and broader spectral linewidths may be related to the observed inhomogeneous indium distribution.

U2 - 10.1063/1.4948299

DO - 10.1063/1.4948299

M3 - Article

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 175703

ER -

Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T et al. The microstructure of non-polar a-plane (1120) InGaN quantum wells. Journal of Applied Physics. 2016;119(17). 175703. https://doi.org/10.1063/1.4948299