The influence of mechanical and electrical interfacial conditions on threshold field of ferroelectric nanothin films

X. F. Zhao, A. K. Soh

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

The influence of mechanical and electrical interfacial conditions on the threshold field of ferroelectric nanothin films has been studied by employing GinzburgLandau theory and the phase field method. The results obtained show that the threshold field of the ferroelectric thin film increased with increasing compressive misfit strain and extrapolation length. This was because the said factors increased the energy barrier for domain wall motion by affecting the elastic and depolarization fields in the film. These results are useful for the manufacture and application of micro-electromechanical-systems including ferroelectric thin films.

Original languageEnglish
Article number12500130
JournalFunctional Materials Letters
Volume5
Issue number1
DOIs
Publication statusPublished - Mar 2012
Externally publishedYes

Keywords

  • Ferroelectric
  • interfacial condition
  • phase field method
  • thin film
  • threshold field

Cite this