The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ''green'' gap problem

Fabien C-P Massabuau, Matthew J Davies, Fabrice Oehler, S K Pamenter, E J Thrush, Menno Johannes Kappers, Andras Kovacs, Timothy Brendan Williams, Margaret A Hopkins, Colin J Humphreys, Philip Dawson, Rafal Edward Dunin-Borkowski, Joanne Etheridge, Duncan WE Allsopp, Rachel A Oliver

Research output: Contribution to journalArticleResearchpeer-review

Original languageEnglish
Pages (from-to)1 - 5
Number of pages5
JournalApplied Physics Letters
Volume105
Issue number11
DOIs
Publication statusPublished - 2014

Cite this

Massabuau, F. C-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., ... Oliver, R. A. (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ''green'' gap problem. Applied Physics Letters, 105(11), 1 - 5. https://doi.org/10.1063/1.4896279
Massabuau, Fabien C-P ; Davies, Matthew J ; Oehler, Fabrice ; Pamenter, S K ; Thrush, E J ; Kappers, Menno Johannes ; Kovacs, Andras ; Williams, Timothy Brendan ; Hopkins, Margaret A ; Humphreys, Colin J ; Dawson, Philip ; Dunin-Borkowski, Rafal Edward ; Etheridge, Joanne ; Allsopp, Duncan WE ; Oliver, Rachel A. / The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ''green'' gap problem. In: Applied Physics Letters. 2014 ; Vol. 105, No. 11. pp. 1 - 5.
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author = "Massabuau, {Fabien C-P} and Davies, {Matthew J} and Fabrice Oehler and Pamenter, {S K} and Thrush, {E J} and Kappers, {Menno Johannes} and Andras Kovacs and Williams, {Timothy Brendan} and Hopkins, {Margaret A} and Humphreys, {Colin J} and Philip Dawson and Dunin-Borkowski, {Rafal Edward} and Joanne Etheridge and Allsopp, {Duncan WE} and Oliver, {Rachel A}",
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Massabuau, FC-P, Davies, MJ, Oehler, F, Pamenter, SK, Thrush, EJ, Kappers, MJ, Kovacs, A, Williams, TB, Hopkins, MA, Humphreys, CJ, Dawson, P, Dunin-Borkowski, RE, Etheridge, J, Allsopp, DWE & Oliver, RA 2014, 'The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ''green'' gap problem', Applied Physics Letters, vol. 105, no. 11, pp. 1 - 5. https://doi.org/10.1063/1.4896279

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ''green'' gap problem. / Massabuau, Fabien C-P; Davies, Matthew J; Oehler, Fabrice; Pamenter, S K; Thrush, E J; Kappers, Menno Johannes; Kovacs, Andras; Williams, Timothy Brendan; Hopkins, Margaret A; Humphreys, Colin J; Dawson, Philip; Dunin-Borkowski, Rafal Edward; Etheridge, Joanne; Allsopp, Duncan WE; Oliver, Rachel A.

In: Applied Physics Letters, Vol. 105, No. 11, 2014, p. 1 - 5.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ''green'' gap problem

AU - Massabuau, Fabien C-P

AU - Davies, Matthew J

AU - Oehler, Fabrice

AU - Pamenter, S K

AU - Thrush, E J

AU - Kappers, Menno Johannes

AU - Kovacs, Andras

AU - Williams, Timothy Brendan

AU - Hopkins, Margaret A

AU - Humphreys, Colin J

AU - Dawson, Philip

AU - Dunin-Borkowski, Rafal Edward

AU - Etheridge, Joanne

AU - Allsopp, Duncan WE

AU - Oliver, Rachel A

PY - 2014

Y1 - 2014

UR - http://scitation.aip.org/deliver/fulltext/aip/journal/apl/105/11/1.4896279.pdf

U2 - 10.1063/1.4896279

DO - 10.1063/1.4896279

M3 - Article

VL - 105

SP - 1

EP - 5

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -