TY - JOUR
T1 - The effect of flexoelectricity on domain switching in the vicinity of a crack in ferroelectrics
AU - Zhao, Xiaofang
AU - Soh, A. K.
N1 - Funding Information:
This work was supported by the Beijing Natural Science Foundation [grant number 1164011 ]; Monash University Malaysia Strategic Large Grant Scheme [Project code LG-2017-04-ENG], and the Advanced Engineering Programme and School of Engineering, Monash University Malaysia .
Publisher Copyright:
© 2017 Elsevier Ltd
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/4
Y1 - 2018/4
N2 - Ferroelectrics are widely used in the manufacture of transducers, actuators, and memory devices, due to their attractive electromechanical properties. However, the reliability and failure of devices is greatly dependent on their brittleness. In view of the fact that both the polarization distribution and elastic field are at nanoscale and vary greatly in the vicinity of the crack tip, flexoelectricity is expected to strongly affect the domain configuration. In this work, Ginzburg-Landau (TDGL) theory and the phase field method (PFM) are employed to analyze the influence of flexoelectric effect on the domain switching process in the vicinity of the crack tip of ferroelectric materials. The results obtained show that, the domain configuration would become asymmetric with increasing flexoelectric coefficients, and the flexoelectric effect has a larger influence on the polarization field than on the elastic field in the vicinity of the crack tip of ferroelectric materials.
AB - Ferroelectrics are widely used in the manufacture of transducers, actuators, and memory devices, due to their attractive electromechanical properties. However, the reliability and failure of devices is greatly dependent on their brittleness. In view of the fact that both the polarization distribution and elastic field are at nanoscale and vary greatly in the vicinity of the crack tip, flexoelectricity is expected to strongly affect the domain configuration. In this work, Ginzburg-Landau (TDGL) theory and the phase field method (PFM) are employed to analyze the influence of flexoelectric effect on the domain switching process in the vicinity of the crack tip of ferroelectric materials. The results obtained show that, the domain configuration would become asymmetric with increasing flexoelectric coefficients, and the flexoelectric effect has a larger influence on the polarization field than on the elastic field in the vicinity of the crack tip of ferroelectric materials.
KW - Crack
KW - Ferroelectric
KW - Flexoelectric effect
KW - Phase-field method
KW - Polarization switching
UR - http://www.scopus.com/inward/record.url?scp=85030760508&partnerID=8YFLogxK
U2 - 10.1016/j.jeurceramsoc.2017.10.009
DO - 10.1016/j.jeurceramsoc.2017.10.009
M3 - Article
AN - SCOPUS:85030760508
VL - 38
SP - 1341
EP - 1348
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
IS - 4
ER -