The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes

Yan-Hong Deng; Yan-Qing Li; Qing-Dong Ou; Qian-Kun Wang; Fu-Zhou Sun; Xiang Yu Chen; Jian-Xin Tang

doi:10.1016/j.orgel.2014.03.027

The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes

Yan-Hong Deng, Yan-Qing Li, Qing-Dong Ou, Qian-Kun Wang, Fu-Zhou Sun, Xiang Yu Chen, Jian-Xin Tang

Research output: Contribution to journal › Article › Research › peer-review

31 Citations (Scopus)

Abstract

The doping effect of cesium compounds (i.e., Cs₂CO₃, CsN₃ and CsF) doped electron injection layer (EIL) on charge transport properties and operational stability of organic light-emitting diodes (OLEDs) was systematically investigated in this work. It has been found that device characteristics and lifetime are highly dependent on the doping constituent materials. The doping of cesium compounds in EIL can improve the charge injection and transport of OLEDs, due to the increase in conductivity and reduction in electron injection barrier. Apart from the difference in electrical characteristics, the operational stability of OLEDs is strongly influenced by the doping mechanism of different cesium compounds in the EILs. The OLED device using Cs₂CO₃ as the n-type dopant for the EIL shows a superiority in both electrical property and operational lifetime.

Original language	English
Pages (from-to)	1215-1221
Number of pages	7
Journal	Organic Electronics
Volume	15
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2014.03.027
Publication status	Published - Jun 2014
Externally published	Yes

Keywords

Cesium compounds
n-Type dopant
Operational stability
Organic light-emitting diodes

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10.1016/j.orgel.2014.03.027

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title = "The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes",

abstract = "The doping effect of cesium compounds (i.e., Cs2CO3, CsN3 and CsF) doped electron injection layer (EIL) on charge transport properties and operational stability of organic light-emitting diodes (OLEDs) was systematically investigated in this work. It has been found that device characteristics and lifetime are highly dependent on the doping constituent materials. The doping of cesium compounds in EIL can improve the charge injection and transport of OLEDs, due to the increase in conductivity and reduction in electron injection barrier. Apart from the difference in electrical characteristics, the operational stability of OLEDs is strongly influenced by the doping mechanism of different cesium compounds in the EILs. The OLED device using Cs2CO3 as the n-type dopant for the EIL shows a superiority in both electrical property and operational lifetime.",

keywords = "Cesium compounds, n-Type dopant, Operational stability, Organic light-emitting diodes",

author = "Yan-Hong Deng and Yan-Qing Li and Qing-Dong Ou and Qian-Kun Wang and Fu-Zhou Sun and Chen, {Xiang Yu} and Jian-Xin Tang",

year = "2014",

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doi = "10.1016/j.orgel.2014.03.027",

language = "English",

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T1 - The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes

AU - Deng, Yan-Hong

AU - Li, Yan-Qing

AU - Ou, Qing-Dong

AU - Wang, Qian-Kun

AU - Sun, Fu-Zhou

AU - Chen, Xiang Yu

AU - Tang, Jian-Xin

PY - 2014/6

Y1 - 2014/6

N2 - The doping effect of cesium compounds (i.e., Cs2CO3, CsN3 and CsF) doped electron injection layer (EIL) on charge transport properties and operational stability of organic light-emitting diodes (OLEDs) was systematically investigated in this work. It has been found that device characteristics and lifetime are highly dependent on the doping constituent materials. The doping of cesium compounds in EIL can improve the charge injection and transport of OLEDs, due to the increase in conductivity and reduction in electron injection barrier. Apart from the difference in electrical characteristics, the operational stability of OLEDs is strongly influenced by the doping mechanism of different cesium compounds in the EILs. The OLED device using Cs2CO3 as the n-type dopant for the EIL shows a superiority in both electrical property and operational lifetime.

AB - The doping effect of cesium compounds (i.e., Cs2CO3, CsN3 and CsF) doped electron injection layer (EIL) on charge transport properties and operational stability of organic light-emitting diodes (OLEDs) was systematically investigated in this work. It has been found that device characteristics and lifetime are highly dependent on the doping constituent materials. The doping of cesium compounds in EIL can improve the charge injection and transport of OLEDs, due to the increase in conductivity and reduction in electron injection barrier. Apart from the difference in electrical characteristics, the operational stability of OLEDs is strongly influenced by the doping mechanism of different cesium compounds in the EILs. The OLED device using Cs2CO3 as the n-type dopant for the EIL shows a superiority in both electrical property and operational lifetime.

KW - Cesium compounds

KW - n-Type dopant

KW - Operational stability

KW - Organic light-emitting diodes

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DO - 10.1016/j.orgel.2014.03.027

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VL - 15

SP - 1215

EP - 1221

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 6

ER -

The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes

Abstract

Keywords

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