TY - JOUR
T1 - The differential reactivity of octahydridosilsesquioxane on Si(1 0 0)-2×1 and Si(1 1 1)-7×7
T2 - A comparative experimental study
AU - Schneider, Kevin S.
AU - Nicholson, Kenneth T.
AU - Owens, Thomas M.
AU - Orr, Bradford G.
AU - Banaszak Holl, Mark M.
PY - 2003/1/1
Y1 - 2003/1/1
N2 - Scanning tunneling microscopy (STM), in conjunction with X-ray photoemission (XPS) and reflection-absorption infrared (RAIRS) spectroscopy, has been used to investigate the reaction of octahydridosilsesquioxane clusters (H8Si8O12) on the Si(100)-2×1 and Si(111)-7×7 surfaces. The clusters exhibit a markedly different reactivity upon exposure to the two clean silicon surfaces. STM data is presented that, in conjunction with XPS and RAIRS data, provides numerous constraints upon possible geometries for the chemisorbed clusters. The sum of the data is consistent with a dissociative reaction mechanism on Si(100)-2×1, resulting in cluster attachment to the surface via a single vertex. Conversely, data of Si(111)-7×7 subject to a saturation exposure of H8Si8O12 is presented that is highly suggestive of cluster decomposition on the surface.
AB - Scanning tunneling microscopy (STM), in conjunction with X-ray photoemission (XPS) and reflection-absorption infrared (RAIRS) spectroscopy, has been used to investigate the reaction of octahydridosilsesquioxane clusters (H8Si8O12) on the Si(100)-2×1 and Si(111)-7×7 surfaces. The clusters exhibit a markedly different reactivity upon exposure to the two clean silicon surfaces. STM data is presented that, in conjunction with XPS and RAIRS data, provides numerous constraints upon possible geometries for the chemisorbed clusters. The sum of the data is consistent with a dissociative reaction mechanism on Si(100)-2×1, resulting in cluster attachment to the surface via a single vertex. Conversely, data of Si(111)-7×7 subject to a saturation exposure of H8Si8O12 is presented that is highly suggestive of cluster decomposition on the surface.
KW - Hydridosilsesquioxane
KW - Reflection-absorption infrared spectroscopy
KW - Scanning tunneling microscopy
KW - Si/SiO
KW - Silicon-silicon oxide interface
KW - X-ray photoemission spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0037866416&partnerID=8YFLogxK
U2 - 10.1016/S0304-3991(03)00028-7
DO - 10.1016/S0304-3991(03)00028-7
M3 - Article
AN - SCOPUS:0037866416
SN - 0304-3991
VL - 97
SP - 35
EP - 45
JO - Ultramicroscopy
JF - Ultramicroscopy
IS - 1-4
ER -