The crystallisation of deep amorphous wells in silicon produced by ion implantation

A. C Y Liu, J. C. McCallum, J. Wong-Leung

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    The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.

    Original languageEnglish
    Pages (from-to)164-168
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Publication statusPublished - 1 Apr 2001
    Event12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil
    Duration: 3 Sept 20008 Sept 2000


    • Amorphous silicon
    • Ion implantation
    • Lateral solid phase epitaxy
    • Transmission electron microscopy

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