The crystallisation of deep amorphous wells in silicon produced by ion implantation

A. C Y Liu; J. C. McCallum; J. Wong-Leung

doi:10.1016/S0168-583X(01)00335-4

The crystallisation of deep amorphous wells in silicon produced by ion implantation

A. C Y Liu, J. C. McCallum, J. Wong-Leung

Research output: Contribution to journal › Conference article › Research › peer-review

6 Citations (Scopus)

Abstract

The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.

Original language	English
Pages (from-to)	164-168
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	175-177
DOIs	https://doi.org/10.1016/S0168-583X(01)00335-4
Publication status	Published - 1 Apr 2001
Event	12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil Duration: 3 Sep 2000 → 8 Sep 2000

Keywords

Amorphous silicon
Ion implantation
Lateral solid phase epitaxy
Transmission electron microscopy

Access to Document

10.1016/S0168-583X(01)00335-4

Cite this

@article{f30e68ca64314b67b9c698ac1c9b732c,

title = "The crystallisation of deep amorphous wells in silicon produced by ion implantation",

abstract = "The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.",

keywords = "Amorphous silicon, Ion implantation, Lateral solid phase epitaxy, Transmission electron microscopy",

author = "Liu, {A. C Y} and McCallum, {J. C.} and J. Wong-Leung",

year = "2001",

month = apr,

day = "1",

doi = "10.1016/S0168-583X(01)00335-4",

language = "English",

volume = "175-177",

pages = "164--168",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

note = "12th International Conference on Ion Beam Modification of Materials ; Conference date: 03-09-2000 Through 08-09-2000",

}

The crystallisation of deep amorphous wells in silicon produced by ion implantation. / Liu, A. C Y; McCallum, J. C.; Wong-Leung, J.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 175-177, 01.04.2001, p. 164-168.

Research output: Contribution to journal › Conference article › Research › peer-review

TY - JOUR

T1 - The crystallisation of deep amorphous wells in silicon produced by ion implantation

AU - Liu, A. C Y

AU - McCallum, J. C.

AU - Wong-Leung, J.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.

AB - The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.

KW - Amorphous silicon

KW - Ion implantation

KW - Lateral solid phase epitaxy

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=0035302751&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(01)00335-4

DO - 10.1016/S0168-583X(01)00335-4

M3 - Conference article

AN - SCOPUS:0035302751

VL - 175-177

SP - 164

EP - 168

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

T2 - 12th International Conference on Ion Beam Modification of Materials

Y2 - 3 September 2000 through 8 September 2000

ER -

The crystallisation of deep amorphous wells in silicon produced by ion implantation

Abstract

Keywords

Access to Document

Other files and links

Cite this