The crystallisation of deep amorphous wells in silicon produced by ion implantation

A. C Y Liu; J. C. McCallum; J. Wong-Leung

doi:10.1016/S0168-583X(01)00335-4

The crystallisation of deep amorphous wells in silicon produced by ion implantation

A. C Y Liu, J. C. McCallum, J. Wong-Leung

Research output: Contribution to journal › Conference article › Research › peer-review

6 Citations (Scopus)

Abstract

The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.

Original language	English
Pages (from-to)	164-168
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	175-177
DOIs	https://doi.org/10.1016/S0168-583X(01)00335-4
Publication status	Published - 1 Apr 2001
Event	12th International Conference on Ion Beam Modification of Materials - Rio Grande do Sul, Brazil Duration: 3 Sep 2000 → 8 Sep 2000

Keywords

Amorphous silicon
Ion implantation
Lateral solid phase epitaxy
Transmission electron microscopy

Access to Document

10.1016/S0168-583X(01)00335-4

Link to publication in Scopus

Cite this

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title = "The crystallisation of deep amorphous wells in silicon produced by ion implantation",

abstract = "The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.",

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The crystallisation of deep amorphous wells in silicon produced by ion implantation. / Liu, A. C Y; McCallum, J. C.; Wong-Leung, J.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 175-177, 01.04.2001, p. 164-168.

Research output: Contribution to journal › Conference article › Research › peer-review

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T1 - The crystallisation of deep amorphous wells in silicon produced by ion implantation

AU - Liu, A. C Y

AU - McCallum, J. C.

AU - Wong-Leung, J.

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N2 - The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.

AB - The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional transmission electron microscopy analyses. It is discovered that the recovery of the amorphous material is governed by the dynamics of solid-phase epitaxy and that unique secondary structures result from the heat treatment.

KW - Amorphous silicon

KW - Ion implantation

KW - Lateral solid phase epitaxy

KW - Transmission electron microscopy

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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