Temperature-dependent n-p transition in a three-dimensional Dirac semimetal Na3Bi thin film

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Abstract

We study the temperature dependence (77-475 K) of the longitudinal resistivity and Hall coefficient of thin films (thickness 20 nm) of three-dimensional topological Dirac semimetal Na3Bi grown via molecular beam epitaxy. The temperature-dependent Hall coefficient is electronlike at low temperature, but transitions to holelike transport around 200 K. We develop a model of a Dirac band with electron-hole asymmetry in Fermi velocity and mobility (assumed proportional to the square of Fermi velocity) which explains well the magnitude and temperature dependence of the Hall resistivity. We find that the hole mobility is about seven times larger than the electron mobility. In addition, we find that the electron mobility decreases significantly with increasing temperature, suggesting electron-phonon scattering strongly limits the room-temperature mobility.

Original languageEnglish
Article number235412
JournalPhysical Review B
Volume96
Issue number23
DOIs
Publication statusPublished - 11 Dec 2017

Cite this

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title = "Temperature-dependent n-p transition in a three-dimensional Dirac semimetal Na3Bi thin film",
abstract = "We study the temperature dependence (77-475 K) of the longitudinal resistivity and Hall coefficient of thin films (thickness 20 nm) of three-dimensional topological Dirac semimetal Na3Bi grown via molecular beam epitaxy. The temperature-dependent Hall coefficient is electronlike at low temperature, but transitions to holelike transport around 200 K. We develop a model of a Dirac band with electron-hole asymmetry in Fermi velocity and mobility (assumed proportional to the square of Fermi velocity) which explains well the magnitude and temperature dependence of the Hall resistivity. We find that the hole mobility is about seven times larger than the electron mobility. In addition, we find that the electron mobility decreases significantly with increasing temperature, suggesting electron-phonon scattering strongly limits the room-temperature mobility.",
author = "Chang Liu and Jack Hellerstedt and Edmonds, {Mark T.} and Fuhrer, {Michael S.}",
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Temperature-dependent n-p transition in a three-dimensional Dirac semimetal Na3Bi thin film. / Liu, Chang; Hellerstedt, Jack; Edmonds, Mark T.; Fuhrer, Michael S.

In: Physical Review B, Vol. 96, No. 23, 235412, 11.12.2017.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Temperature-dependent n-p transition in a three-dimensional Dirac semimetal Na3Bi thin film

AU - Liu, Chang

AU - Hellerstedt, Jack

AU - Edmonds, Mark T.

AU - Fuhrer, Michael S.

PY - 2017/12/11

Y1 - 2017/12/11

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AB - We study the temperature dependence (77-475 K) of the longitudinal resistivity and Hall coefficient of thin films (thickness 20 nm) of three-dimensional topological Dirac semimetal Na3Bi grown via molecular beam epitaxy. The temperature-dependent Hall coefficient is electronlike at low temperature, but transitions to holelike transport around 200 K. We develop a model of a Dirac band with electron-hole asymmetry in Fermi velocity and mobility (assumed proportional to the square of Fermi velocity) which explains well the magnitude and temperature dependence of the Hall resistivity. We find that the hole mobility is about seven times larger than the electron mobility. In addition, we find that the electron mobility decreases significantly with increasing temperature, suggesting electron-phonon scattering strongly limits the room-temperature mobility.

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DO - 10.1103/PhysRevB.96.235412

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JO - Physical Review B

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