Temperature dependent electroluminescence from all-Si-nanocrystal p-i-n diodes grown on dielectric substrates

L. Wu, B. Puthen-Veettil, K. Nomoto, X. Hao, X. Jia, Z. Lin, T. C. Yang, T. Zhang, S. Gutsch, G. Conibeer, I. Perez-Wurfl

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In this work, we demonstrate for the first time the electroluminescence (EL) from a mesa isolated p-i-n diode based on silicon nanocrystals (Si NCs) embedded in a SiO2 matrix fabricated on a dielectric substrate. The structure fabricated on a dielectric substrate ensures that the EL signal originates entirely from the Si NC material. A small offset between the EL (1.28 eV) and photoluminescence (PL) (1.33 eV) peak energies has been observed at room temperature. We attribute this discrepancy to the different subset of light-emitting Si NCs in EL and PL. A model classifying Si NCs into connected NCs and isolated NCs is proposed. Atom probe tomography is employed to visualize the existence of isolated NCs and connected NCs. This model has been further studied using temperature dependent EL and PL, where a blue-shift of peak energy is observed as the temperature is increased. The blue-shift is attributed to the temperature dependent transport between the two subsets of NCs and the quenching of the PL emission from the connected NCs at higher temperatures.

Original languageEnglish
Article number063102
Number of pages5
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 14 Feb 2016
Externally publishedYes

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