Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5

T J S Anand; Hoi-Pang Ng; Alfonso Ngan; X K Meng

doi:10.1016/S0040-6090(03)00921-0

Temperature-coefficient-of-resistance characteristics of sputter-deposited Ni_xAl_1-x thin films for 0.5

T J S Anand
, Hoi-Pang Ng
, Alfonso Ngan
, X K Meng

Research output: Contribution to journal › Article › Research › peer-review

15 Citations (Scopus)

Abstract

By investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon.

Original language	English
Pages (from-to)	298-306
Number of pages	9
Journal	Thin Solid Films
Volume	441
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00921-0
Publication status	Published - 2003
Externally published	Yes

Access to Document

10.1016/S0040-6090(03)00921-0

Cite this

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title = "Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5",

abstract = "By investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon.",

author = "Anand, \{T J S\} and Hoi-Pang Ng and Alfonso Ngan and Meng, \{X K\}",

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T1 - Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5

AU - Anand, T J S

AU - Ng, Hoi-Pang

AU - Ngan, Alfonso

AU - Meng, X K

PY - 2003

Y1 - 2003

N2 - By investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon.

AB - By investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon.

U2 - 10.1016/S0040-6090(03)00921-0

DO - 10.1016/S0040-6090(03)00921-0

M3 - Article

SN - 0040-6090

VL - 441

SP - 298

EP - 306

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -