Ta3N5 photoanodes for water splitting prepared by sputtering

Daisuke Yokoyama; Hiroshi Hashiguchi; Kazuhiko Maeda; Tsutomu Minegishi; Tsuyoshi Takata; Ryu Abe; Jun Kubota; Kazunari Domen

doi:10.1016/j.tsf.2010.10.055

Ta₃N₅ photoanodes for water splitting prepared by sputtering

Daisuke Yokoyama, Hiroshi Hashiguchi, Kazuhiko Maeda, Tsutomu Minegishi, Tsuyoshi Takata, Ryu Abe, Jun Kubota, Kazunari Domen

Research output: Contribution to journal › Article › Research › peer-review

133 Citations (Scopus)

Abstract

Ta₃N₅ thin-film photoelectrodes were prepared using a reactive sputtering technique, and their properties for photoelectrochemical water splitting under visible light were investigated. The crystal phases of the films were dependent on the sputtering conditions, such as the N ₂/O₂ ratio of the sputtering atmosphere and the substrate temperature (T_s). Single-phase Ta₃N₅ films were obtained by sputtering at N₂/O₂ = 30 and T_s = 1013 K with post-annealing in an NH₃ flow. The Ta₃N ₅ photoelectrodes had an anodic photoresponse in water photoelectrolysis, although the photocurrent rapidly decreased because of self-oxidation of the photoanode by photogenerated holes. However, modification of the NH₃-treated Ta₃N₅ films with IrO ₂ promoted the oxidation of water and suppressed the self-oxidation of Ta₃N₅.

Original language	English
Pages (from-to)	2087-2092
Number of pages	6
Journal	Thin Solid Films
Volume	519
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2010.10.055
Publication status	Published - 31 Jan 2011
Externally published	Yes

Keywords

Nitride
Photoanode
Sputtering
Surface modification
Water splitting

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.tsf.2010.10.055

Cite this

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title = "Ta3N5 photoanodes for water splitting prepared by sputtering",

abstract = "Ta3N5 thin-film photoelectrodes were prepared using a reactive sputtering technique, and their properties for photoelectrochemical water splitting under visible light were investigated. The crystal phases of the films were dependent on the sputtering conditions, such as the N 2/O2 ratio of the sputtering atmosphere and the substrate temperature (Ts). Single-phase Ta3N5 films were obtained by sputtering at N2/O2 = 30 and Ts = 1013 K with post-annealing in an NH3 flow. The Ta3N 5 photoelectrodes had an anodic photoresponse in water photoelectrolysis, although the photocurrent rapidly decreased because of self-oxidation of the photoanode by photogenerated holes. However, modification of the NH3-treated Ta3N5 films with IrO 2 promoted the oxidation of water and suppressed the self-oxidation of Ta3N5.",

keywords = "Nitride, Photoanode, Sputtering, Surface modification, Water splitting",

author = "Daisuke Yokoyama and Hiroshi Hashiguchi and Kazuhiko Maeda and Tsutomu Minegishi and Tsuyoshi Takata and Ryu Abe and Jun Kubota and Kazunari Domen",

year = "2011",

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day = "31",

doi = "10.1016/j.tsf.2010.10.055",

language = "English",

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pages = "2087--2092",

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T1 - Ta3N5 photoanodes for water splitting prepared by sputtering

AU - Yokoyama, Daisuke

AU - Hashiguchi, Hiroshi

AU - Maeda, Kazuhiko

AU - Minegishi, Tsutomu

AU - Takata, Tsuyoshi

AU - Abe, Ryu

AU - Kubota, Jun

AU - Domen, Kazunari

PY - 2011/1/31

Y1 - 2011/1/31

N2 - Ta3N5 thin-film photoelectrodes were prepared using a reactive sputtering technique, and their properties for photoelectrochemical water splitting under visible light were investigated. The crystal phases of the films were dependent on the sputtering conditions, such as the N 2/O2 ratio of the sputtering atmosphere and the substrate temperature (Ts). Single-phase Ta3N5 films were obtained by sputtering at N2/O2 = 30 and Ts = 1013 K with post-annealing in an NH3 flow. The Ta3N 5 photoelectrodes had an anodic photoresponse in water photoelectrolysis, although the photocurrent rapidly decreased because of self-oxidation of the photoanode by photogenerated holes. However, modification of the NH3-treated Ta3N5 films with IrO 2 promoted the oxidation of water and suppressed the self-oxidation of Ta3N5.

AB - Ta3N5 thin-film photoelectrodes were prepared using a reactive sputtering technique, and their properties for photoelectrochemical water splitting under visible light were investigated. The crystal phases of the films were dependent on the sputtering conditions, such as the N 2/O2 ratio of the sputtering atmosphere and the substrate temperature (Ts). Single-phase Ta3N5 films were obtained by sputtering at N2/O2 = 30 and Ts = 1013 K with post-annealing in an NH3 flow. The Ta3N 5 photoelectrodes had an anodic photoresponse in water photoelectrolysis, although the photocurrent rapidly decreased because of self-oxidation of the photoanode by photogenerated holes. However, modification of the NH3-treated Ta3N5 films with IrO 2 promoted the oxidation of water and suppressed the self-oxidation of Ta3N5.

KW - Nitride

KW - Photoanode

KW - Sputtering

KW - Surface modification

KW - Water splitting

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DO - 10.1016/j.tsf.2010.10.055

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JO - Thin Solid Films

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SN - 0040-6090

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