Synthetic Control of Solid/Solid Interfaces: Analysis of Three New Silicon/Silicon Oxide Interfaces by Soft X-ray Photoemission

Sunghee Lee, Sanjeev Makan, Mark M.Banaszak Holl, F. R. McFeely

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Three new silicon/silicon oxide interfaces have been synthesized using the spherosiloxane clusters H8-Si8O12, H12Si12O18, H14Si14O21, and Si(100)-(2x1). The structure of the interfaces have been characterized by Si 2p core level photoemission spectroscopy. Reactions of H8Si8O12 with Si(111)-(7x7) and Ge(100)-(2x1) were also explored. The use of the cluster derived interfaces as spectroscopic models for thermal Si/SiO2 interfaces is discussed in terms of current methods for assigning photoemission spectra at solid/solid interfaces and the structural models proposed for the Si/SiO2 interface.

Original languageEnglish
Pages (from-to)11819-11826
Number of pages8
JournalJournal of the American Chemical Society
Issue number26
Publication statusPublished - 1 Dec 1994
Externally publishedYes

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