Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace

Kong Eng Ng; Teck Yaw Tiong; Mohdambri Mohamed; Wei Sea Chang; Chang Fu Dee; Burhanuddin Yeop Majlis

doi:10.1109/SMELEC.2018.8481292

Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace

Kong Eng Ng, Teck Yaw Tiong, Mohdambri Mohamed, Wei Sea Chang, Chang Fu Dee, Burhanuddin Yeop Majlis

Malaysia Sch of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

Abstract

In this research., a 1064 nm Nd:YAG laser with pulse duration of 8 ns was used to fire ZnO pellet in a furnace using 6 different energy densities. A substrate was placed above the ZnO target which was positioning at an angle of 45° within the frame of the target holder. ZnO nanoflakes were formed on the surface of ceramic., Al₂O₃substrate was placed upside down on a substrate holder. This simple modification on the substrate orientation has greatly reduced the deposition of useless debris on the substrate. High crystalline ZnO nanoflakes with diameter ranging from 30 to 100 nm were characterized by Field Emission Scanning Electron Microscope (FESEM). Three sharp peaks (100)., (002) and (101) characterized by X-Ray Diffraction (XRD) confirm the deposition of ZnO nanoflakes on the Al₂O₃substrate. The depositions were remarkable as it required only low tube-furnace vacuum of 3.9 Torr (5.2 mbar) without extra thermal source other than the heat generated by the laser itself.

Original language	English
Title of host publication	2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	140-143
Number of pages	4
ISBN (Electronic)	9781538652831
DOIs	https://doi.org/10.1109/SMELEC.2018.8481292
Publication status	Published - 2018
Event	IEEE International Conference on Semiconductor Electronics 2018 - Kuala Lumpur, Malaysia Duration: 15 Aug 2018 → 17 Aug 2018 Conference number: 13th https://ieeexplore.ieee.org/xpl/conhome/8472196/proceeding (Proceedings)

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Volume	2018-August

Conference

Conference	IEEE International Conference on Semiconductor Electronics 2018
Abbreviated title	ICSE 2018
Country/Territory	Malaysia
City	Kuala Lumpur
Period	15/08/18 → 17/08/18
Internet address	https://ieeexplore.ieee.org/xpl/conhome/8472196/proceeding (Proceedings)

Keywords

nanostructured materials
pulsed laser deposition
ZnO nanoflakes

Access to Document

10.1109/SMELEC.2018.8481292

Cite this

Ng, K. E., Tiong, T. Y., Mohamed, M., Chang, W. S., Dee, C. F., & Majlis, B. Y. (2018). Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (pp. 140-143). (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SMELEC.2018.8481292

Ng, Kong Eng ; Tiong, Teck Yaw ; Mohamed, Mohdambri et al. / Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. IEEE, Institute of Electrical and Electronics Engineers, 2018. pp. 140-143 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

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title = "Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace",

abstract = "In this research., a 1064 nm Nd:YAG laser with pulse duration of 8 ns was used to fire ZnO pellet in a furnace using 6 different energy densities. A substrate was placed above the ZnO target which was positioning at an angle of 45° within the frame of the target holder. ZnO nanoflakes were formed on the surface of ceramic., Al2O3substrate was placed upside down on a substrate holder. This simple modification on the substrate orientation has greatly reduced the deposition of useless debris on the substrate. High crystalline ZnO nanoflakes with diameter ranging from 30 to 100 nm were characterized by Field Emission Scanning Electron Microscope (FESEM). Three sharp peaks (100)., (002) and (101) characterized by X-Ray Diffraction (XRD) confirm the deposition of ZnO nanoflakes on the Al2O3substrate. The depositions were remarkable as it required only low tube-furnace vacuum of 3.9 Torr (5.2 mbar) without extra thermal source other than the heat generated by the laser itself.",

keywords = "nanostructured materials, pulsed laser deposition, ZnO nanoflakes",

author = "Ng, {Kong Eng} and Tiong, {Teck Yaw} and Mohdambri Mohamed and Chang, {Wei Sea} and Dee, {Chang Fu} and Majlis, {Burhanuddin Yeop}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; IEEE International Conference on Semiconductor Electronics 2018, ICSE 2018 ; Conference date: 15-08-2018 Through 17-08-2018",

year = "2018",

doi = "10.1109/SMELEC.2018.8481292",

language = "English",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

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Ng, KE, Tiong, TY, Mohamed, M, Chang, WS, Dee, CF & Majlis, BY 2018, Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, vol. 2018-August, IEEE, Institute of Electrical and Electronics Engineers, pp. 140-143, IEEE International Conference on Semiconductor Electronics 2018, Kuala Lumpur, Malaysia, 15/08/18. https://doi.org/10.1109/SMELEC.2018.8481292

Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace. / Ng, Kong Eng; Tiong, Teck Yaw; Mohamed, Mohdambri et al.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. IEEE, Institute of Electrical and Electronics Engineers, 2018. p. 140-143 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE; Vol. 2018-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › Other

TY - GEN

T1 - Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace

AU - Ng, Kong Eng

AU - Tiong, Teck Yaw

AU - Mohamed, Mohdambri

AU - Chang, Wei Sea

AU - Dee, Chang Fu

AU - Majlis, Burhanuddin Yeop

N1 - Conference code: 13th

PY - 2018

Y1 - 2018

N2 - In this research., a 1064 nm Nd:YAG laser with pulse duration of 8 ns was used to fire ZnO pellet in a furnace using 6 different energy densities. A substrate was placed above the ZnO target which was positioning at an angle of 45° within the frame of the target holder. ZnO nanoflakes were formed on the surface of ceramic., Al2O3substrate was placed upside down on a substrate holder. This simple modification on the substrate orientation has greatly reduced the deposition of useless debris on the substrate. High crystalline ZnO nanoflakes with diameter ranging from 30 to 100 nm were characterized by Field Emission Scanning Electron Microscope (FESEM). Three sharp peaks (100)., (002) and (101) characterized by X-Ray Diffraction (XRD) confirm the deposition of ZnO nanoflakes on the Al2O3substrate. The depositions were remarkable as it required only low tube-furnace vacuum of 3.9 Torr (5.2 mbar) without extra thermal source other than the heat generated by the laser itself.

AB - In this research., a 1064 nm Nd:YAG laser with pulse duration of 8 ns was used to fire ZnO pellet in a furnace using 6 different energy densities. A substrate was placed above the ZnO target which was positioning at an angle of 45° within the frame of the target holder. ZnO nanoflakes were formed on the surface of ceramic., Al2O3substrate was placed upside down on a substrate holder. This simple modification on the substrate orientation has greatly reduced the deposition of useless debris on the substrate. High crystalline ZnO nanoflakes with diameter ranging from 30 to 100 nm were characterized by Field Emission Scanning Electron Microscope (FESEM). Three sharp peaks (100)., (002) and (101) characterized by X-Ray Diffraction (XRD) confirm the deposition of ZnO nanoflakes on the Al2O3substrate. The depositions were remarkable as it required only low tube-furnace vacuum of 3.9 Torr (5.2 mbar) without extra thermal source other than the heat generated by the laser itself.

KW - nanostructured materials

KW - pulsed laser deposition

KW - ZnO nanoflakes

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T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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EP - 143

BT - 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings

PB - IEEE, Institute of Electrical and Electronics Engineers

T2 - IEEE International Conference on Semiconductor Electronics 2018

Y2 - 15 August 2018 through 17 August 2018

ER -

Ng KE, Tiong TY, Mohamed M, Chang WS, Dee CF, Majlis BY. Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. IEEE, Institute of Electrical and Electronics Engineers. 2018. p. 140-143. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2018.8481292

Synthesis of ZnO nanoflakes by 1064 nm Nd:YAG pulsed laser deposition in a horizontal tube furnace

Abstract

Publication series

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Keywords

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