Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures

Zhipeng Li, Jialu Zheng, Yupeng Zhang, Changxi Zheng, Wei-Yen Woon, Min-Chiang Chuang, Hung-Chieh Tsai, Chia-Hao Chen, Asher Davis, Zai-Quan Xu, Jiao Lin, Han Zhang, Qiaoliang Bao

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.

Original languageEnglish
Pages (from-to)34204-34212
Number of pages9
JournalACS Applied Materials and Interfaces
Volume9
Issue number39
DOIs
Publication statusPublished - 2017

Keywords

  • Chemical vapor deposition
  • Heterostructure
  • Optoelectronic devices
  • Substitution
  • Transition-metal dichalcogenides
  • Two-dimensional material

Cite this

Li, Zhipeng ; Zheng, Jialu ; Zhang, Yupeng ; Zheng, Changxi ; Woon, Wei-Yen ; Chuang, Min-Chiang ; Tsai, Hung-Chieh ; Chen, Chia-Hao ; Davis, Asher ; Xu, Zai-Quan ; Lin, Jiao ; Zhang, Han ; Bao, Qiaoliang. / Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 39. pp. 34204-34212.
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abstract = "Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.",
keywords = "Chemical vapor deposition, Heterostructure, Optoelectronic devices, Substitution, Transition-metal dichalcogenides, Two-dimensional material",
author = "Zhipeng Li and Jialu Zheng and Yupeng Zhang and Changxi Zheng and Wei-Yen Woon and Min-Chiang Chuang and Hung-Chieh Tsai and Chia-Hao Chen and Asher Davis and Zai-Quan Xu and Jiao Lin and Han Zhang and Qiaoliang Bao",
year = "2017",
doi = "10.1021/acsami.7b08668",
language = "English",
volume = "9",
pages = "34204--34212",
journal = "ACS Applied Materials and Interfaces",
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Li, Z, Zheng, J, Zhang, Y, Zheng, C, Woon, W-Y, Chuang, M-C, Tsai, H-C, Chen, C-H, Davis, A, Xu, Z-Q, Lin, J, Zhang, H & Bao, Q 2017, 'Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures' ACS Applied Materials and Interfaces, vol. 9, no. 39, pp. 34204-34212. https://doi.org/10.1021/acsami.7b08668

Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures. / Li, Zhipeng; Zheng, Jialu; Zhang, Yupeng; Zheng, Changxi; Woon, Wei-Yen; Chuang, Min-Chiang; Tsai, Hung-Chieh; Chen, Chia-Hao; Davis, Asher; Xu, Zai-Quan; Lin, Jiao; Zhang, Han; Bao, Qiaoliang.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 39, 2017, p. 34204-34212.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Synthesis of ultrathin composition graded doped Lateral WSe2/WS2 heterostructures

AU - Li, Zhipeng

AU - Zheng, Jialu

AU - Zhang, Yupeng

AU - Zheng, Changxi

AU - Woon, Wei-Yen

AU - Chuang, Min-Chiang

AU - Tsai, Hung-Chieh

AU - Chen, Chia-Hao

AU - Davis, Asher

AU - Xu, Zai-Quan

AU - Lin, Jiao

AU - Zhang, Han

AU - Bao, Qiaoliang

PY - 2017

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N2 - Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.

AB - Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.

KW - Chemical vapor deposition

KW - Heterostructure

KW - Optoelectronic devices

KW - Substitution

KW - Transition-metal dichalcogenides

KW - Two-dimensional material

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U2 - 10.1021/acsami.7b08668

DO - 10.1021/acsami.7b08668

M3 - Article

VL - 9

SP - 34204

EP - 34212

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

IS - 39

ER -