Amorphous Cu2S thin films were deposited on ITO substrate by successive ion layer adsorption and reaction (SILAR) method. Anionic thiosulfatocopper (I) complex ion was used as the single precursor for copper and sulfide ions, and ethylene glycol was used as the solvent. The stoichiometric Cu2S was confirmed by energy dispersive X-ray spectroscopy (EDS). SEM images indicated that the Cu2S films were uniform and composed of nanoparticles. The prepared Cu2S film exhibited high absorption coefficients and wide band gap (higher than 2.55 eV).