Synthesis of stable amorphous Cu2S thin film by successive ion layer adsorption and reaction method

Fuwei Zhuge; Xiaomin Li; Xiangdong Gao; Xiaoyan Gan; Fengling Zhou

doi:10.1016/j.matlet.2008.12.010

Synthesis of stable amorphous Cu2S thin film by successive ion layer adsorption and reaction method

Fuwei Zhuge, Xiaomin Li, Xiangdong Gao, Xiaoyan Gan, Fengling Zhou

Research output: Contribution to journal › Article › Research › peer-review

69 Citations (Scopus)

Abstract

Amorphous Cu2S thin films were deposited on ITO substrate by successive ion layer adsorption and reaction (SILAR) method. Anionic thiosulfatocopper (I) complex ion was used as the single precursor for copper and sulfide ions, and ethylene glycol was used as the solvent. The stoichiometric Cu2S was confirmed by energy dispersive X-ray spectroscopy (EDS). SEM images indicated that the Cu2S films were uniform and composed of nanoparticles. The prepared Cu2S film exhibited high absorption coefficients and wide band gap (higher than 2.55 eV).

Original language	English
Pages (from-to)	652 - 654
Number of pages	3
Journal	Materials Letters
Volume	63
Issue number	8
DOIs	https://doi.org/10.1016/j.matlet.2008.12.010
Publication status	Published - 2009
Externally published	Yes

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10.1016/j.matlet.2008.12.010

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title = "Synthesis of stable amorphous Cu2S thin film by successive ion layer adsorption and reaction method",

abstract = "Amorphous Cu2S thin films were deposited on ITO substrate by successive ion layer adsorption and reaction (SILAR) method. Anionic thiosulfatocopper (I) complex ion was used as the single precursor for copper and sulfide ions, and ethylene glycol was used as the solvent. The stoichiometric Cu2S was confirmed by energy dispersive X-ray spectroscopy (EDS). SEM images indicated that the Cu2S films were uniform and composed of nanoparticles. The prepared Cu2S film exhibited high absorption coefficients and wide band gap (higher than 2.55 eV).",

author = "Fuwei Zhuge and Xiaomin Li and Xiangdong Gao and Xiaoyan Gan and Fengling Zhou",

year = "2009",

doi = "10.1016/j.matlet.2008.12.010",

language = "English",

volume = "63",

pages = "652 -- 654",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier BV",

number = "8",

}

TY - JOUR

T1 - Synthesis of stable amorphous Cu2S thin film by successive ion layer adsorption and reaction method

AU - Zhuge, Fuwei

AU - Li, Xiaomin

AU - Gao, Xiangdong

AU - Gan, Xiaoyan

AU - Zhou, Fengling

PY - 2009

Y1 - 2009

N2 - Amorphous Cu2S thin films were deposited on ITO substrate by successive ion layer adsorption and reaction (SILAR) method. Anionic thiosulfatocopper (I) complex ion was used as the single precursor for copper and sulfide ions, and ethylene glycol was used as the solvent. The stoichiometric Cu2S was confirmed by energy dispersive X-ray spectroscopy (EDS). SEM images indicated that the Cu2S films were uniform and composed of nanoparticles. The prepared Cu2S film exhibited high absorption coefficients and wide band gap (higher than 2.55 eV).

AB - Amorphous Cu2S thin films were deposited on ITO substrate by successive ion layer adsorption and reaction (SILAR) method. Anionic thiosulfatocopper (I) complex ion was used as the single precursor for copper and sulfide ions, and ethylene glycol was used as the solvent. The stoichiometric Cu2S was confirmed by energy dispersive X-ray spectroscopy (EDS). SEM images indicated that the Cu2S films were uniform and composed of nanoparticles. The prepared Cu2S film exhibited high absorption coefficients and wide band gap (higher than 2.55 eV).

UR - http://goo.gl/JuF1M2

U2 - 10.1016/j.matlet.2008.12.010

DO - 10.1016/j.matlet.2008.12.010

M3 - Article

SN - 0167-577X

VL - 63

SP - 652

EP - 654

JO - Materials Letters

JF - Materials Letters

IS - 8

ER -

Synthesis of stable amorphous Cu2S thin film by successive ion layer adsorption and reaction method

Abstract

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