Switching Performance Evaluation of two State-of-the-Art SiC MOSFETs

This paper compares the switching performance of two state-of-the-art Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) utilising the Double Pulse Test method. The evaluation focuses on assessing the impact of key parameters such as total gate charge (Qg) and on-resistance (RO N) on the switching characteristics of the MOSFETs. Through experimental investigation, the switching behaviours, including turn-on and turn-off times, switching losses, and body-diode reverse recovery characteristics (Qr r), are analysed and compared between the two devices. The results demonstrate that a SiC MOSFET with a lower total gate charge and higher on-resistance exhibits superior switching performance compared to a SiC MOSFET with a higher total gate charge and lower on-resistance. The study concludes that prioritising low total gate charge for faster switching for pulsed power applications is more critical than minimising conduction losses through a lower RO N.