Surface electron microscopy of Ga droplet dynamics on GaAs (001)

David Jesson, Wen-Xin Tang

    Research output: Chapter in Book/Report/Conference proceedingChapter (Book)Researchpeer-review

    Abstract

    We describe the design and application of a surface electron microscope which has been constructed to study the in situ growth dynamics occurring on III-V semiconductor surfaces during molecular beam epitaxy. Mirror electron microscopy and photo-emission electron microscopy (PEEM) are used to ellucidate the physics of Langmuir (free) evaporation of GaAs. Of particular interest is the formation and motion of Ga droplets across the surface. We also describe the surface electron microscopy technique known as Lloyda??s Mirror PEEM which has been developed to image surface topography in real-time. This is applied to determine Ga droplet contact angles during evaporation and the extension to synchrotron based Lloyda??s Mirror x-ray PEEM (XPEEM) is considered
    Original languageEnglish
    Title of host publicationMicroscopy: Science, Technology, Applications and Education
    EditorsA Mendez-Vilas, J Diaz
    Place of PublicationSpain
    PublisherFormatex
    Pages1608 - 1619
    Number of pages12
    ISBN (Print)9788461461912
    Publication statusPublished - 2010

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