Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

Mark Thomas Edmonds; Christopher Ian Pakes; Samir Mammadov; Wenying Zhang; Anton Tadich; Jurgen Ristein; Lothar F Ley

doi:10.1063/1.3561760

Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

Mark Thomas Edmonds, Christopher Ian Pakes, Samir Mammadov, Wenying Zhang, Anton Tadich, Jurgen Ristein, Lothar F Ley

Research output: Contribution to journal › Article › Research › peer-review

27 Citations (Scopus)

Abstract

Simultaneous measurements of work function (ϕ) and C 1s core level shift were employed to determine the change in electron affinity (χ) and band bending as a function of hole sheet density on H-terminated diamond for atmospheric and fullerene (C60F48) induced surface conductivity. Contrary to earlier investigations, it is shown that changes in work function do not reflect variations in the position of the surface Fermi level in response to surface transfer doping. Instead, with a transition from −0.96 to −0.33 eV, χ accounts for a significant amount of the change in ϕ for hole densities between 5×108 and 4×1013 cm−2.

Original language	English
Pages (from-to)	1 - 3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.3561760
Publication status	Published - 2011
Externally published	Yes

Access to Document

10.1063/1.3561760

Cite this

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title = "Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond",

abstract = "Simultaneous measurements of work function (ϕ) and C 1s core level shift were employed to determine the change in electron affinity (χ) and band bending as a function of hole sheet density on H-terminated diamond for atmospheric and fullerene (C60F48) induced surface conductivity. Contrary to earlier investigations, it is shown that changes in work function do not reflect variations in the position of the surface Fermi level in response to surface transfer doping. Instead, with a transition from −0.96 to −0.33 eV, χ accounts for a significant amount of the change in ϕ for hole densities between 5×108 and 4×1013 cm−2.",

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T1 - Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond

AU - Edmonds, Mark Thomas

AU - Pakes, Christopher Ian

AU - Mammadov, Samir

AU - Zhang, Wenying

AU - Tadich, Anton

AU - Ristein, Jurgen

AU - Ley, Lothar F

PY - 2011

Y1 - 2011

N2 - Simultaneous measurements of work function (ϕ) and C 1s core level shift were employed to determine the change in electron affinity (χ) and band bending as a function of hole sheet density on H-terminated diamond for atmospheric and fullerene (C60F48) induced surface conductivity. Contrary to earlier investigations, it is shown that changes in work function do not reflect variations in the position of the surface Fermi level in response to surface transfer doping. Instead, with a transition from −0.96 to −0.33 eV, χ accounts for a significant amount of the change in ϕ for hole densities between 5×108 and 4×1013 cm−2.

AB - Simultaneous measurements of work function (ϕ) and C 1s core level shift were employed to determine the change in electron affinity (χ) and band bending as a function of hole sheet density on H-terminated diamond for atmospheric and fullerene (C60F48) induced surface conductivity. Contrary to earlier investigations, it is shown that changes in work function do not reflect variations in the position of the surface Fermi level in response to surface transfer doping. Instead, with a transition from −0.96 to −0.33 eV, χ accounts for a significant amount of the change in ϕ for hole densities between 5×108 and 4×1013 cm−2.

U2 - 10.1063/1.3561760

DO - 10.1063/1.3561760

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JO - Applied Physics Letters

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