Ultra-low energy ‘topological electronics’ are a promising avenue to reduce the energy used in computing—now 8% of worldwide electricity consumption. In a topological transistor, an electric field would switch a material from topological insulator (“on”, with nearly resistance-less conducting edges) to a conventional insulator (“off”). We recently demonstrated this switching for the first time in 2D films of Na3 Bi, and found that the measured bandgaps are orders of magnitude greater than the energy available at room temperature. This suggests that Na3 Bi is suitable for room-temperature topological transistors.
|Number of pages||4|
|Publication status||Published - 1 Mar 2019|