Succeeding silicon: Topological transistors electric-field controlled topological phase transitions in Na3 Bi

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Abstract

Ultra-low energy ‘topological electronics’ are a promising avenue to reduce the energy used in computing—now 8% of worldwide electricity consumption. In a topological transistor, an electric field would switch a material from topological insulator (“on”, with nearly resistance-less conducting edges) to a conventional insulator (“off”). We recently demonstrated this switching for the first time in 2D films of Na3 Bi, and found that the measured bandgaps are orders of magnitude greater than the energy available at room temperature. This suggests that Na3 Bi is suitable for room-temperature topological transistors.

Original languageEnglish
Pages (from-to)50-53
Number of pages4
JournalAustralian Physics
Volume56
Issue number2
Publication statusPublished - 1 Mar 2019

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