Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering

Min Cherl Jung, Sonia R. Raga, Luis K. Ono, Yabing Qi

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Abstract

We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2′,7,7′-tetrakis(N,N′-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit voltage. Time-dependent solar cell performance measurements revealed significantly improved air stability for perovskite solar cells with the n-i-p structured spiro-OMeTAD HTL showing sustained efficiencies even after 840 h of air exposure.

Original languageEnglish
Article number9863
Number of pages5
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - 18 May 2015
Externally publishedYes

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