TY - JOUR
T1 - Structural, optical and electrical properties of well-ordered ZnO nanowires grown on (1 1 1) oriented Si, GaAs and InP substrates by electrochemical deposition method
AU - Pham, Huyen T.
AU - Nguyen, Tam D.
AU - Tran, Dat Q.
AU - Akabori, Masashi
PY - 2017/5/3
Y1 - 2017/5/3
N2 - ZnO semiconductors, especially in form of nanomaterials, possess many excellent properties and have been employed in many applications. In this article, we reported the selective area growth of ZnO nanowires on different (1 1 1) oriented Si, GaAs, and first time on InP substrates by electrochemical deposition method without any seed layers, using zinc nitrate hexahydrate precursor in the presence of hexamethylenetetramine. The position, density and orientation of such ZnO nanowires were controlled by the substrate patterning technique using electron-beam lithography. As-synthesized ZnO nanowires grown on patterned substrates show smaller diameter, higher density and better orientation, compared to the one grown on unpatterned substrates. In particular, the ZnO nanowires grown on GaAs patterned substrate indicate the best morphological property, with the average diameter, length and density of about 100 nm, 2.4 μm and 35 μm-2, respectively. The x-ray diffraction and Raman scattering also demonstrate high crystalline quality of our ZnO nanowires. Moreover, as-reported ZnO nanowires are also conductive, which would allow their use in fieldeffect transistor and other potential nanoscale device applications.
AB - ZnO semiconductors, especially in form of nanomaterials, possess many excellent properties and have been employed in many applications. In this article, we reported the selective area growth of ZnO nanowires on different (1 1 1) oriented Si, GaAs, and first time on InP substrates by electrochemical deposition method without any seed layers, using zinc nitrate hexahydrate precursor in the presence of hexamethylenetetramine. The position, density and orientation of such ZnO nanowires were controlled by the substrate patterning technique using electron-beam lithography. As-synthesized ZnO nanowires grown on patterned substrates show smaller diameter, higher density and better orientation, compared to the one grown on unpatterned substrates. In particular, the ZnO nanowires grown on GaAs patterned substrate indicate the best morphological property, with the average diameter, length and density of about 100 nm, 2.4 μm and 35 μm-2, respectively. The x-ray diffraction and Raman scattering also demonstrate high crystalline quality of our ZnO nanowires. Moreover, as-reported ZnO nanowires are also conductive, which would allow their use in fieldeffect transistor and other potential nanoscale device applications.
KW - Electrochemical method
KW - Field effect transistor
KW - Nanowires
KW - Orientation control
KW - Zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=85020233171&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/aa6c9a
DO - 10.1088/2053-1591/aa6c9a
M3 - Article
AN - SCOPUS:85020233171
SN - 2053-1591
VL - 4
JO - Materials Research Express
JF - Materials Research Express
IS - 5
M1 - 055002
ER -