Structural, electrical and optical properties of indium tin oxide thin films prepared by RF sputtering using different density ceramic targets

Wei Zhang, Guisheng Zhu, Li Zhi, Huijuan Yang, Zupei Yang, Aibing Yu, Huarui Xu

Research output: Contribution to journalArticleResearchpeer-review

22 Citations (Scopus)


There is an active demand for the commercial indium tin oxide (ITO) target with density above 99% of the theoretical density (TD). Some works found the increase of the target density could lead to a slight decrease of the resistivity of the direct current (DC) sputtered ITO films, however, the possible effect of target density on the radio frequency (RF) sputtered ITO films is not clear. In this paper, ITO targets with different densities are successfully prepared. The structural, electrical and optical properties of the thin films deposited from these targets are studied at the substrate temperature of 750°C. It is found that the target density has no effect on the above properties and the deposition rate of the RF sputtered ITO thin films, different from the DC sputtered films. So for the RF sputtered process, the target needs not high density so that the used target can be just compacted from the powders without sintering. All the as-prepared ITO films with different densities have a resistivity of 1.56 × 10 -4 Ω cm and a transmittance of ∼87%, which are lower than the ITO films prepared at temperatures lower than 400°C.

Original languageEnglish
Pages (from-to)1045-1047
Number of pages3
Issue number8
Publication statusPublished - 29 Feb 2012
Externally publishedYes


  • Density
  • Indium tin oxide
  • Target
  • Thin film

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