Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping

Qingdong Ou, Yupeng Zhang, Ziyu Wang, Jodie A. Yuwono, Rongbin Wang, Zhigao Dai, Wei Li, Changxi Zheng, Zai-quan Xu, Xiang Qi, Steffen Duhm, Nikhil V. Medhekar, Han Zhang, Qiaoliang Bao

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129 Citations (Scopus)


A semiconductor p–n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic–inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p–n junction induced by local electronic doping at the surface of individual CH3NH3PbI3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W−1.

Original languageEnglish
Article number1705792
Number of pages10
JournalAdvanced Materials
Issue number15
Publication statusPublished - 12 Apr 2018


  • chemical doping
  • depletion region
  • hybrid perovskite
  • photodetectors
  • p–n junctions

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