Abstract
A semiconductor p–n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic–inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p–n junction induced by local electronic doping at the surface of individual CH3NH3PbI3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W−1.
| Original language | English |
|---|---|
| Article number | 1705792 |
| Number of pages | 10 |
| Journal | Advanced Materials |
| Volume | 30 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 12 Apr 2018 |
Keywords
- chemical doping
- depletion region
- hybrid perovskite
- photodetectors
- p–n junctions
Cite this
}
Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping. / Ou, Qingdong; Zhang, Yupeng; Wang, Ziyu; Yuwono, Jodie A.; Wang, Rongbin; Dai, Zhigao; Li, Wei; Zheng, Changxi; Xu, Zai-quan; Qi, Xiang; Duhm, Steffen; Medhekar, Nikhil V.; Zhang, Han; Bao, Qiaoliang.
In: Advanced Materials, Vol. 30, No. 15, 1705792, 12.04.2018.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping
AU - Ou, Qingdong
AU - Zhang, Yupeng
AU - Wang, Ziyu
AU - Yuwono, Jodie A.
AU - Wang, Rongbin
AU - Dai, Zhigao
AU - Li, Wei
AU - Zheng, Changxi
AU - Xu, Zai-quan
AU - Qi, Xiang
AU - Duhm, Steffen
AU - Medhekar, Nikhil V.
AU - Zhang, Han
AU - Bao, Qiaoliang
PY - 2018/4/12
Y1 - 2018/4/12
N2 - A semiconductor p–n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic–inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p–n junction induced by local electronic doping at the surface of individual CH3NH3PbI3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W−1.
AB - A semiconductor p–n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the depletion layer width. In conventional bulk and atomically thin junctions, this correlation challenges the synergy of the internal field and its spatial extent in carrier generation/transport. Organic–inorganic hybrid perovskites, a class of crystalline ionic semiconductors, are promising alternatives because of their direct badgap, long diffusion length, and large dielectric constant. Here, strong depletion in a lateral p–n junction induced by local electronic doping at the surface of individual CH3NH3PbI3 perovskite nanosheets is reported. Unlike conventional surface doping with a weak van der Waals adsorption, covalent bonding and hydrogen bonding between a MoO3 dopant and the perovskite are theoretically predicted and experimentally verified. The strong hybridization-induced electronic coupling leads to an enhanced built-in electric field. The large electric permittivity arising from the ionic polarizability further contributes to the formation of an unusually broad depletion region up to 10 µm in the junction. Under visible optical excitation without electrical bias, the lateral diode demonstrates unprecedented photovoltaic conversion with an external quantum efficiency of 3.93% and a photodetection responsivity of 1.42 A W−1.
KW - chemical doping
KW - depletion region
KW - hybrid perovskite
KW - photodetectors
KW - p–n junctions
UR - http://www.scopus.com/inward/record.url?scp=85042611422&partnerID=8YFLogxK
U2 - 10.1002/adma.201705792
DO - 10.1002/adma.201705792
M3 - Article
VL - 30
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 15
M1 - 1705792
ER -