Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

David Quandt, Jans-Hindrik Schulze, Andrei Schliwa, Zeno Diemer, Christopher Prohl, Andrea Lenz, Holger Eisele, Andre Strittmatter, Udo W Pohl, Manuel Gschrey, Sven Rodt, Stephan Reitzenstein, D Bimberg, Michael Lehmann, Matthew Weyland

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Stacks of InAs/GaAs submonolayer depositions forming small In-rich islands are interesting for efficient optoelectronic applications due to the high areal density of localization centers and their fast carrier relaxation. The electronic confinement of charge carriers in InAs/GaAs submonolayers can be influenced by adding Sb during growth. Eight-band k . p simulations show that electrons and holes experience a different localization depending on where the Sb is incorporated into the submonolayer stacks. Samples grown with metalorganic vapor-phase epitaxy show sharp interfaces between InAs(Sb)/GaAs submonolayers and the surrounding matrix material in transmission electron microscopy and x-ray diffraction measurements. Cross-sectional scanning tunneling microscopy shows the formation of In-rich agglomerations as well as a slight clustering of Sb atoms. Temperature-dependent photoluminescence and spatially resolved cathodoluminescence show evidence for strong electronic confinement whose depth is controlled by the Sb amount.
Original languageEnglish
Pages (from-to)1 - 9
Number of pages9
JournalPhysical Review B
Volume91
Issue number23
DOIs
Publication statusPublished - 2015

Cite this

Quandt, David ; Schulze, Jans-Hindrik ; Schliwa, Andrei ; Diemer, Zeno ; Prohl, Christopher ; Lenz, Andrea ; Eisele, Holger ; Strittmatter, Andre ; Pohl, Udo W ; Gschrey, Manuel ; Rodt, Sven ; Reitzenstein, Stephan ; Bimberg, D ; Lehmann, Michael ; Weyland, Matthew. / Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy. In: Physical Review B. 2015 ; Vol. 91, No. 23. pp. 1 - 9.
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title = "Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy",
abstract = "Stacks of InAs/GaAs submonolayer depositions forming small In-rich islands are interesting for efficient optoelectronic applications due to the high areal density of localization centers and their fast carrier relaxation. The electronic confinement of charge carriers in InAs/GaAs submonolayers can be influenced by adding Sb during growth. Eight-band k . p simulations show that electrons and holes experience a different localization depending on where the Sb is incorporated into the submonolayer stacks. Samples grown with metalorganic vapor-phase epitaxy show sharp interfaces between InAs(Sb)/GaAs submonolayers and the surrounding matrix material in transmission electron microscopy and x-ray diffraction measurements. Cross-sectional scanning tunneling microscopy shows the formation of In-rich agglomerations as well as a slight clustering of Sb atoms. Temperature-dependent photoluminescence and spatially resolved cathodoluminescence show evidence for strong electronic confinement whose depth is controlled by the Sb amount.",
author = "David Quandt and Jans-Hindrik Schulze and Andrei Schliwa and Zeno Diemer and Christopher Prohl and Andrea Lenz and Holger Eisele and Andre Strittmatter and Pohl, {Udo W} and Manuel Gschrey and Sven Rodt and Stephan Reitzenstein and D Bimberg and Michael Lehmann and Matthew Weyland",
year = "2015",
doi = "10.1103/PhysRevB.91.235418",
language = "English",
volume = "91",
pages = "1 -- 9",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
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Quandt, D, Schulze, J-H, Schliwa, A, Diemer, Z, Prohl, C, Lenz, A, Eisele, H, Strittmatter, A, Pohl, UW, Gschrey, M, Rodt, S, Reitzenstein, S, Bimberg, D, Lehmann, M & Weyland, M 2015, 'Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy', Physical Review B, vol. 91, no. 23, pp. 1 - 9. https://doi.org/10.1103/PhysRevB.91.235418

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy. / Quandt, David; Schulze, Jans-Hindrik; Schliwa, Andrei; Diemer, Zeno; Prohl, Christopher; Lenz, Andrea; Eisele, Holger; Strittmatter, Andre; Pohl, Udo W; Gschrey, Manuel; Rodt, Sven; Reitzenstein, Stephan; Bimberg, D; Lehmann, Michael; Weyland, Matthew.

In: Physical Review B, Vol. 91, No. 23, 2015, p. 1 - 9.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

AU - Quandt, David

AU - Schulze, Jans-Hindrik

AU - Schliwa, Andrei

AU - Diemer, Zeno

AU - Prohl, Christopher

AU - Lenz, Andrea

AU - Eisele, Holger

AU - Strittmatter, Andre

AU - Pohl, Udo W

AU - Gschrey, Manuel

AU - Rodt, Sven

AU - Reitzenstein, Stephan

AU - Bimberg, D

AU - Lehmann, Michael

AU - Weyland, Matthew

PY - 2015

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N2 - Stacks of InAs/GaAs submonolayer depositions forming small In-rich islands are interesting for efficient optoelectronic applications due to the high areal density of localization centers and their fast carrier relaxation. The electronic confinement of charge carriers in InAs/GaAs submonolayers can be influenced by adding Sb during growth. Eight-band k . p simulations show that electrons and holes experience a different localization depending on where the Sb is incorporated into the submonolayer stacks. Samples grown with metalorganic vapor-phase epitaxy show sharp interfaces between InAs(Sb)/GaAs submonolayers and the surrounding matrix material in transmission electron microscopy and x-ray diffraction measurements. Cross-sectional scanning tunneling microscopy shows the formation of In-rich agglomerations as well as a slight clustering of Sb atoms. Temperature-dependent photoluminescence and spatially resolved cathodoluminescence show evidence for strong electronic confinement whose depth is controlled by the Sb amount.

AB - Stacks of InAs/GaAs submonolayer depositions forming small In-rich islands are interesting for efficient optoelectronic applications due to the high areal density of localization centers and their fast carrier relaxation. The electronic confinement of charge carriers in InAs/GaAs submonolayers can be influenced by adding Sb during growth. Eight-band k . p simulations show that electrons and holes experience a different localization depending on where the Sb is incorporated into the submonolayer stacks. Samples grown with metalorganic vapor-phase epitaxy show sharp interfaces between InAs(Sb)/GaAs submonolayers and the surrounding matrix material in transmission electron microscopy and x-ray diffraction measurements. Cross-sectional scanning tunneling microscopy shows the formation of In-rich agglomerations as well as a slight clustering of Sb atoms. Temperature-dependent photoluminescence and spatially resolved cathodoluminescence show evidence for strong electronic confinement whose depth is controlled by the Sb amount.

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DO - 10.1103/PhysRevB.91.235418

M3 - Article

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EP - 9

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

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ER -