Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

Yui Hong Matthias Tan; Hoon Ryu; Bent Weber; Sunhee Lee; Rajib Rahman; Lloyd C L Hollenberg; Michelle Y. Simmons; Gerhard Klimeck

doi:10.1109/SNW.2014.7348589

Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

Yui Hong Matthias Tan, Hoon Ryu, Bent Weber, Sunhee Lee, Rajib Rahman, Lloyd C L Hollenberg, Michelle Y. Simmons, Gerhard Klimeck

Research output: Contribution to conference › Abstract

Abstract

Donor-based silicon phosphorus devices are regarded as promising candidates for quantum computing architectures. The precise number of donors in an ultra-scaled silicon phosphorus double donor-dot device [1] is determined via comparison of theoretically modeled binding energy confidence bands with experimental charge stability diagram measurements. High fidelity of modeling results are enabled through a comprehensive analysis of atomistic dopant placement fluctuations.

Original language	English
Number of pages	2
DOIs	https://doi.org/10.1109/SNW.2014.7348589
Publication status	Published - 4 Dec 2015
Externally published	Yes
Event	IEEE Silicon Nanoelectronics Workshop 2014 - Hilton Hawaiian Village, Honolulu HI, United States of America Duration: 8 Jun 2014 → 9 Jun 2014 http://snw2014.insight-outside.fr/minatec/index.php

Workshop

Workshop	IEEE Silicon Nanoelectronics Workshop 2014
Abbreviated title	SNW 2014
Country/Territory	United States of America
City	Honolulu HI
Period	8/06/14 → 9/06/14
Internet address	http://snw2014.insight-outside.fr/minatec/index.php

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10.1109/SNW.2014.7348589

Cite this

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title = "Statistical modeling of ultra-scaled donor-based silicon phosphorus devices",

abstract = "Donor-based silicon phosphorus devices are regarded as promising candidates for quantum computing architectures. The precise number of donors in an ultra-scaled silicon phosphorus double donor-dot device [1] is determined via comparison of theoretically modeled binding energy confidence bands with experimental charge stability diagram measurements. High fidelity of modeling results are enabled through a comprehensive analysis of atomistic dopant placement fluctuations.",

author = "Tan, \{Yui Hong Matthias\} and Hoon Ryu and Bent Weber and Sunhee Lee and Rajib Rahman and Hollenberg, \{Lloyd C L\} and Simmons, \{Michelle Y.\} and Gerhard Klimeck",

year = "2015",

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doi = "10.1109/SNW.2014.7348589",

language = "English",

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T1 - Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

AU - Tan, Yui Hong Matthias

AU - Ryu, Hoon

AU - Weber, Bent

AU - Lee, Sunhee

AU - Rahman, Rajib

AU - Hollenberg, Lloyd C L

AU - Simmons, Michelle Y.

AU - Klimeck, Gerhard

PY - 2015/12/4

Y1 - 2015/12/4

N2 - Donor-based silicon phosphorus devices are regarded as promising candidates for quantum computing architectures. The precise number of donors in an ultra-scaled silicon phosphorus double donor-dot device [1] is determined via comparison of theoretically modeled binding energy confidence bands with experimental charge stability diagram measurements. High fidelity of modeling results are enabled through a comprehensive analysis of atomistic dopant placement fluctuations.

AB - Donor-based silicon phosphorus devices are regarded as promising candidates for quantum computing architectures. The precise number of donors in an ultra-scaled silicon phosphorus double donor-dot device [1] is determined via comparison of theoretically modeled binding energy confidence bands with experimental charge stability diagram measurements. High fidelity of modeling results are enabled through a comprehensive analysis of atomistic dopant placement fluctuations.

UR - https://www.scopus.com/pages/publications/84963830877

U2 - 10.1109/SNW.2014.7348589

DO - 10.1109/SNW.2014.7348589

M3 - Abstract

AN - SCOPUS:84963830877

T2 - IEEE Silicon Nanoelectronics Workshop 2014

Y2 - 8 June 2014 through 9 June 2014

ER -

Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

Abstract

Workshop

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